17643594. PILLAR MEMORY TOP CONTACT LANDING simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

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PILLAR MEMORY TOP CONTACT LANDING

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

SABA Zare of WHITE PLAINS NY (US)

MICHAEL Rizzolo of DELMAR NY (US)

THEODORUS E. Standaert of CLIFTON PARK NY (US)

ALEXANDER Reznicek of TROY NY (US)

PILLAR MEMORY TOP CONTACT LANDING - A simplified explanation of the abstract

This abstract first appeared for US patent application 17643594 titled 'PILLAR MEMORY TOP CONTACT LANDING

Simplified Explanation

Abstract: A semiconductor device is described that includes various components such as electrodes, an MRAM stack, a hardmask structure, a conductive etch stop layer, and a second electrode.

  • The semiconductor device includes a first electrode.
  • An MRAM stack is formed on the first electrode.
  • A hardmask structure is formed on the MRAM stack.
  • A conductive etch stop layer is formed around the hardmask structure.
  • A second electrode is formed on the hardmask structure.

Potential Applications:

  • This semiconductor device can be used in various electronic devices such as computers, smartphones, and tablets.
  • It can be utilized in memory storage applications where non-volatile memory is required.

Problems Solved:

  • The semiconductor device solves the problem of providing a reliable and efficient memory storage solution.
  • It addresses the need for non-volatile memory that can retain data even when power is turned off.

Benefits:

  • The device offers improved performance and reliability compared to traditional memory storage solutions.
  • It provides a compact and efficient design for memory storage.
  • The semiconductor device offers non-volatile memory capabilities, ensuring data retention even during power loss.


Original Abstract Submitted

A semiconductor device is provided. The semiconductor device includes a first electrode; an MRAM stack formed on the first electrode; a hardmask structure formed on the MRAM stack; a conductive etch stop layer formed around the hardmask structure; and a second electrode formed on the hardmask structure.

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