US Patent Application 17827998. MEMORY DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract

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MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Yen-Lin Huang of Menlo Park CA (US)]]

[[Category:Ming-Yuan Song of Hsinchu City (TW)]]

[[Category:Chien-Min Lee of Hsinchu County (TW)]]

[[Category:Nuo Xu of San Jose CA (US)]]

[[Category:Shy-Jay Lin of Hsinchu County (TW)]]

MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17827998 titled 'MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

Simplified Explanation

The patent application describes a memory device with a specific structure and components. Here are the key points:

  • The memory device includes a substrate, a spin-orbit torque (SOT) layer, a magnetic tunneling junction (MTJ) film stack, a connecting via, and a shielding structure.
  • The SOT layer is placed on the substrate.
  • The MTJ film stack is formed over the SOT layer and on the substrate.
  • The connecting via is located on and electrically connected to the MTJ film stack.
  • The shielding structure surrounds the MTJ film stack laterally and is placed on the SOT layer.
  • The shielding structure consists of a first dielectric layer, a high magnetic permeability layer, and a second dielectric layer.
  • The first dielectric layer is in contact with both the SOT layer and the MTJ film stack.
  • The high magnetic permeability layer is sandwiched between the first dielectric layer and the second dielectric layer.


Original Abstract Submitted

A memory device includes a substrate, a spin-orbit torque (SOT) layer, a magnetic tunneling junction (MTJ) film stack, a connecting via and a shielding structure. The SOT layer is disposed on the substrate. The MTJ film stack is formed over SOT layer and on the substrate. The connecting via is disposed on and electrically connected to the MTJ film stack. The shielding structure is laterally surrounding the MTJ film stack and disposed on the SOT layer, wherein the shielding structure includes a first dielectric layer, a high magnetic permeability layer and a second dielectric layer, the first dielectric layer is in contact with the SOT layer and the MTJ film stack, and the high magnetic permeability layer is sandwiched between the first dielectric layer and the second dielectric layer.

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