17643582. MRAM BOTTOM ELECTRODE CONTACT WITH TAPER PROFILE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
MRAM BOTTOM ELECTRODE CONTACT WITH TAPER PROFILE
Organization Name
INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor(s)
ASHIM Dutta of CLIFTON PARK NY (US)
SAUMYA Sharma of EASTON CT (US)
CHIH-CHAO Yang of GLENMONT NY (US)
MRAM BOTTOM ELECTRODE CONTACT WITH TAPER PROFILE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17643582 titled 'MRAM BOTTOM ELECTRODE CONTACT WITH TAPER PROFILE
Simplified Explanation
The abstract describes a patent application for an MRAM (Magnetoresistive Random Access Memory) device. The device includes a semiconductor device with a bottom contact electrode (BEC) and an MRAM stack on top of the BEC. The width of the upper portion of the BEC is smaller than the width of the MRAM stack.
- The patent application is for an MRAM device.
- The device includes a semiconductor device with a bottom contact electrode (BEC).
- The BEC has a narrower width in its upper portion compared to the MRAM stack.
- The MRAM stack is formed on top of the BEC.
Potential Applications
- Memory storage devices
- Computer systems
- Consumer electronics
- Internet of Things (IoT) devices
Problems Solved
- The narrower width of the upper portion of the BEC allows for better integration with the MRAM stack.
- It helps to reduce the overall size of the MRAM device.
- It improves the performance and efficiency of the MRAM device.
Benefits
- Smaller size and improved integration with the MRAM stack.
- Enhanced performance and efficiency of the MRAM device.
- Suitable for various applications in memory storage, computer systems, consumer electronics, and IoT devices.
Original Abstract Submitted
An MRAM device is provided. The MRAM device includes a semiconductor device comprising a bottom contact electrode (BEC), and an MRAM stack formed on the BEC. A width of an upper portion of the BEC is less than a width of the MRAM stack.
