17696968. METHODS OF MANUFACTURING MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

METHODS OF MANUFACTURING MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Minkwan Kim of Seoul (KR)

Daeeun Jeong of Yongin-si (KR)

Kyungtae Nam of Suwon-si (KR)

METHODS OF MANUFACTURING MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17696968 titled 'METHODS OF MANUFACTURING MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE

Simplified Explanation

The abstract describes a method of manufacturing a magnetoresistive random-access memory (MRAM) device. Here is a simplified explanation of the abstract:

• The method starts by forming an insulating interlayer on a substrate.
• A contact plug is then formed, which extends through the insulating interlayer.
• A first blocking layer is formed on the upper surface of the contact plug. This layer is made of an amorphous material.
• Next, a lower electrode layer is formed on top of the first blocking layer.
• Finally, a magnetic tunnel junction structure layer is formed on the lower electrode layer.

Potential applications of this technology:

• MRAM devices can be used in various electronic devices, such as computers, smartphones, and IoT devices.
• MRAM offers non-volatile memory storage, which means it retains data even when power is turned off.
• The technology can be used in applications that require fast read and write speeds, low power consumption, and high endurance.

Problems solved by this technology:

• MRAM devices have been limited by issues such as low write endurance and high power consumption.
• The method described in the patent application addresses these issues by using specific layers and materials to improve the performance of the MRAM device.

Benefits of this technology:

• The method allows for the manufacturing of MRAM devices with improved write endurance.
• The use of an amorphous material in the first blocking layer enhances the performance of the device.
• The resulting MRAM devices have lower power consumption and faster read and write speeds compared to previous technologies.

Original Abstract Submitted

A method of manufacturing a magnetoresistive random-access memory (MRAM) device includes forming an insulating interlayer on a substrate, forming a contact plug extending through the insulating interlayer, forming a first blocking layer covering an upper surface of the contact plug, the first blocking layer including an amorphous material, forming a lower electrode layer on the first blocking layer, and forming a magnetic tunnel junction structure layer on the lower electrode layer.