International business machines corporation (20240130243). MAGNETIC TUNNEL JUNCTION DEVICE simplified abstract
Contents
- 1 MAGNETIC TUNNEL JUNCTION DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MAGNETIC TUNNEL JUNCTION DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
MAGNETIC TUNNEL JUNCTION DEVICE
Organization Name
international business machines corporation
Inventor(s)
Timothy Mathew Philip of Albany NY (US)
Ching-Tzu Chen of Ossining NY (US)
Kevin W. Brew of Niskayuna NY (US)
JIN PING Han of Yorktown Heights NY (US)
MAGNETIC TUNNEL JUNCTION DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240130243 titled 'MAGNETIC TUNNEL JUNCTION DEVICE
Simplified Explanation
The present invention provides a magnetic tunnel junction (MTJ) structure with a unique design featuring multiple sub free layers in the free layer.
- The MTJ structure includes a tunnel barrier layer on a reference layer and a free layer on the tunnel barrier layer.
- The free layer consists of multiple ferromagnetic strips placed parallel to each other on the tunnel barrier layer.
- The multiple ferromagnetic strips are connected to electrodes at their respective ends.
- The design of the MTJ structure allows for improved performance and efficiency in magnetic tunnel junction devices.
Potential Applications
The MTJ structure can be used in:
- Magnetic random-access memory (MRAM) devices
- Magnetic sensors
- Spintronic devices
Problems Solved
- Improved performance and efficiency in magnetic tunnel junction devices
- Enhanced data storage capabilities in MRAM devices
- Increased sensitivity and accuracy in magnetic sensors
Benefits
- Higher data storage density
- Faster data access speeds
- Lower power consumption
- Enhanced device reliability
Potential Commercial Applications
"Enhancing Magnetic Tunnel Junction Devices with Multiple Sub Free Layers"
Possible Prior Art
There have been previous designs of magnetic tunnel junction structures with different configurations of the free layer, but none specifically with multiple sub free layers as described in this invention.
Unanswered Questions
How does the presence of multiple sub free layers impact the overall performance of the MTJ structure?
The article does not delve into the specific effects of having multiple sub free layers on the performance metrics of the MTJ structure.
Are there any limitations or drawbacks to using multiple sub free layers in the free layer of the MTJ structure?
The potential limitations or drawbacks of incorporating multiple sub free layers in the free layer are not discussed in detail in the article.
Original Abstract Submitted
embodiments of present invention provide a magnetic tunnel junction (mtj) structure. the mtj structure includes a mtj stack, the mtj stack including a tunnel barrier layer on a reference layer and a free layer on the tunnel barrier layer, wherein the free layer includes multiple sub free layers, the multiple sub free layers being multiple ferromagnetic strips placed parallel to each other on the tunnel barrier layer, the multiple ferromagnetic strips having respective first ends connected to a first electrode and respective second ends connected to a second electrode. a method of forming the mtj structure is also provided.
