17806750. MAGNETO-RESISTIVE RANDOM ACCESS MEMORY WITH TAPERED SIDEWALLS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

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MAGNETO-RESISTIVE RANDOM ACCESS MEMORY WITH TAPERED SIDEWALLS

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Oscar Van Der Strate of Guilderland Center NY (US)

Koichi Motoyama of Clifton Park NY (US)

Chih-Chao Yang of Glenmont NY (US)

MAGNETO-RESISTIVE RANDOM ACCESS MEMORY WITH TAPERED SIDEWALLS - A simplified explanation of the abstract

This abstract first appeared for US patent application 17806750 titled 'MAGNETO-RESISTIVE RANDOM ACCESS MEMORY WITH TAPERED SIDEWALLS

Simplified Explanation

The patent application describes a memory device that uses a magnetic tunnel junction pillar. The pillar has a top portion with positive taper sidewalls and a bottom portion with negative taper sidewalls. Encapsulation layers are placed along the sidewalls of the pillar.

  • The memory device includes a magnetic tunnel junction pillar with positive and negative taper sidewalls.
  • Encapsulation layers are placed along the sidewalls of the pillar.
  • The encapsulation layers can be made of the same or different materials.

Potential Applications

This technology could be used in various memory devices, such as:

  • Computer memory modules
  • Solid-state drives (SSDs)
  • Magnetic random-access memory (MRAM)
  • Non-volatile memory in electronic devices

Problems Solved

The technology addresses the following problems:

  • Ensuring proper encapsulation of the magnetic tunnel junction pillar
  • Improving the performance and reliability of memory devices
  • Enhancing the stability and durability of the memory device

Benefits

The benefits of this technology include:

  • Improved memory device performance
  • Enhanced reliability and durability
  • Increased stability of the memory device


Original Abstract Submitted

A memory device includes a magnetic tunnel junction pillar extending vertically from a bottom electrode. The magnetic tunnel junction pillar includes a top portion and a bottom portion, the top portion of the magnetic tunnel junction pillar has first opposite sidewalls including a positive taper profile, while the bottom portion of the magnetic tunnel junction has second opposite sidewalls including a negative taper profile. A first encapsulation layer is disposed along the first opposite sidewalls of the top portion of the magnetic tunnel junction pillar, and a second encapsulation layer is disposed along the second opposite sidewalls of the bottom portion of the magnetic tunnel junction pillar. The first and second encapsulation layers can be made of the same or different materials.

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