US Patent Application 17900892. MAGNETIC MEMORY DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract

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MAGNETIC MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Ming-Yuan Song of Hsinchu City (TW)]]

[[Category:Chien-Min Lee of Hsinchu County (TW)]]

[[Category:Shy-Jay Lin of Hsinchu County (TW)]]

[[Category:Tung-Ying Lee of Hsinchu City (TW)]]

[[Category:Xinyu Bao of Fremont CA (US)]]

MAGNETIC MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 17900892 titled 'MAGNETIC MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

Simplified Explanation

The patent application describes a magnetic memory device that consists of a substrate, a spin-orbit torque (SOT) induction structure, and a magnetic tunnel junction (MTJ) stack.

  • The SOT induction structure, made of a metal and at least one dopant, is placed on top of the substrate.
  • The MTJ stack is then placed over the SOT induction structure.
  • The purpose of the SOT induction structure is to induce spin-orbit torque, which can manipulate the magnetization of the MTJ stack.
  • The MTJ stack is responsible for storing and retrieving data in the magnetic memory device.
  • This invention combines the SOT induction structure and the MTJ stack to create a more efficient and reliable magnetic memory device.
  • The use of a metal and dopant in the SOT induction structure enhances its performance and functionality.
  • The arrangement of the SOT induction structure and the MTJ stack on the substrate allows for better integration and operation of the magnetic memory device.


Original Abstract Submitted

A magnetic memory device includes a substrate, a spin-orbit torque (SOT) induction structure, and a magnetic tunnel junction (MTJ) stack. The SOT induction structure is disposed over the substrate. The SOT induction structure includes a metal and at least one dopant. The MTJ stack is disposed over the SOT induction structure.

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