17931689. MAGNETORESISTIVE RANDOM-ACCESS MEMORY WITH TOP AND BOTTOM ELECTRODES DEPOSITED IN UNISON simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
Contents
- 1 MAGNETORESISTIVE RANDOM-ACCESS MEMORY WITH TOP AND BOTTOM ELECTRODES DEPOSITED IN UNISON
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MAGNETORESISTIVE RANDOM-ACCESS MEMORY WITH TOP AND BOTTOM ELECTRODES DEPOSITED IN UNISON - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Original Abstract Submitted
MAGNETORESISTIVE RANDOM-ACCESS MEMORY WITH TOP AND BOTTOM ELECTRODES DEPOSITED IN UNISON
Organization Name
INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor(s)
Oscar Van Der Straten of Guilderland Center NY (US)
Koichi Motoyama of Clifton Park NY (US)
Chih-Chao Yang of Glenmont NY (US)
MAGNETORESISTIVE RANDOM-ACCESS MEMORY WITH TOP AND BOTTOM ELECTRODES DEPOSITED IN UNISON - A simplified explanation of the abstract
This abstract first appeared for US patent application 17931689 titled 'MAGNETORESISTIVE RANDOM-ACCESS MEMORY WITH TOP AND BOTTOM ELECTRODES DEPOSITED IN UNISON
Simplified Explanation
The method described in the patent application involves depositing electrode material in a single process to form a semiconductor structure for a magnetoresistive random-access memory (MRAM) device. This process includes conformally depositing the electrode material over a magnetic tunnel junction (MTJ) pillar, under the MTJ pillar, and around a spacer encapsulating and extending above the MTJ pillar. The electrode material is then recessed to create a thinner top electrode over the MTJ pillar, while the portion of the electrode material under the MTJ pillar forms a thicker bottom electrode.
- Conformally deposit electrode material over MTJ pillar, under the MTJ pillar, and around a spacer.
- Recess electrode material to create a thinner top electrode over the MTJ pillar.
- Thicker portion of the electrode material under the MTJ pillar forms the bottom electrode.
Potential Applications
The technology can be applied in the manufacturing of MRAM devices, which are used in various electronic devices such as computers, smartphones, and IoT devices.
Problems Solved
1. Simplifies the manufacturing process by depositing top and bottom electrodes in a single step. 2. Improves the efficiency of MRAM devices by creating a thinner top electrode for better performance.
Benefits
1. Cost-effective manufacturing process. 2. Enhanced performance of MRAM devices. 3. Increased reliability and durability of semiconductor structures.
Potential Commercial Applications
Optimizing MRAM Device Manufacturing Process for Enhanced Performance
Original Abstract Submitted
A method to form a semiconductor structure for a magnetoresistive random-access memory (MRAM) device where the material for the top electrode and the bottom electrode is deposited in a single process. The method includes conformally depositing an electrode material over a magnetic tunnel junction (MTJ) pillar, under the MTJ pillar, around a spacer encapsulating and extending above the MTJ pillar. The method includes recessing the electrode material to form a thinner portion of the electrode material over the MTJ pillar. The thinner portion of the electrode material forms a thinner portion of the electrode material over the MTJ pillar that is a top electrode. The portion of the electrode material under the MTJ pillar forms a bottom electrode that is thicker than the top electrode.
