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Category:H10D62/10
Subcategories
This category has the following 149 subcategories, out of 149 total.
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Pages in category "H10D62/10"
The following 120 pages are in this category, out of 120 total.
1
- 18686647. Thin Film Transistor, Display Panel and Display Device (BOE Technology Group Co., Ltd.)
- 18982045. Multiple Power Domains Using Nano-sheet Structures (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18982055. PROCESS WINDOW CONTROL FOR GATE FORMATION IN SEMICONDUCTOR DEVICES (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18982711. BIPOLAR JUNCTION TRANSISTOR (BJT) AND FABRICATING METHOD THEREOF (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18982762. ISOLATION STRUCTURES AND METHODS OF FORMING THE SAME IN FIELD-EFFECT TRANSISTORS (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18983288. SEMICONDUCTOR DEVICE (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18984950. MANUFACTURING METHOD OF FIELD EFFECT TRANSISTOR STRUCTURE (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18985150. METHOD AND RELATED APPARATUS FOR REDUCING GATE-INDUCED DRAIN LEAKAGE IN SEMICONDUCTOR DEVICES (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18985356. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME (SAMSUNG ELECTRONICS CO., LTD.)
- 18985586. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18986226. GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING OXIDE SUB-FINS (Intel Corporation)
- 18986778. SiC SEMICONDUCTOR DEVICE (ROHM CO., LTD.)
- 18988822. MONOLITHIC SEMICONDUCTOR DEVICE ASSEMBLIES (SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC)
- 18989332. INTEGRATED CIRCUIT DEVICE AND METHOD OF FORMING THE SAME (Samsung Electronics Co., Ltd.)
- 18991791. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME (NANYA TECHNOLOGY CORPORATION)
- 18991919. Semiconductor Structure Cutting Process and Structures Formed Thereby (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18999095. SOURCE/DRAIN FEATURE SEPARATION STRUCTURE (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18999567. DEEP TRENCH INTERSECTIONS (TEXAS INSTRUMENTS INCORPORATED)
- 18999778. SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH GATE-ALL-AROUND DEVICES (Intel Corporation)
- 18999923. EPITAXIAL SOURCE OR DRAIN STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION (Intel Corporation)
- 19000039. INTEGRATED CIRCUIT STRUCTURES HAVING CUT METAL GATES (Intel Corporation)
- 19001219. RIBBON OR WIRE TRANSISTOR STACK WITH SELECTIVE DIPOLE THRESHOLD VOLTAGE SHIFTER (Intel Corporation)
- 19001750. INTEGRATED CIRCUIT DEVICES HAVING HIGHLY INTEGRATED NMOS AND PMOS TRANSISTORS THEREIN AND METHODS OF FABRICATING THE SAME (Samsung Electronics Co., Ltd.)
- 19002361. TRANSISTOR GATE STRUCTURES AND METHODS OF FORMING THE SAME (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19002450. CUT METAL GATE REFILL WITH VOID (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 19002487. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19002519. METHOD OF MANUFACTURING A FIELD EFFECT TRANSISTOR USING CARBON NANOTUBES AND A FIELD EFFECT TRANSISTOR (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19002734. SEMICONDUCTOR STRUCTURE (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)
- 19002850. INTEGRATED CHIP WITH A GATE STRUCTURE DISPOSED WITHIN A TRENCH (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19002882. Semiconductor Device and Method (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 19003044. GATE OXIDE OF NANOSTRUCTURE TRANSISTOR WITH INCREASED CORNER THICKNESS (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19004041. SEMICONDUCTOR DEVICE WITH METAL GATE FILL STRUCTURE (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19004052. SEMICONDUCTOR DEVICES HAVING GATE-ALL-AROUND STRUCTURE AND METHODS OF FABRICATING THE SAME (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19004755. BACKSIDE PN JUNCTION DIODE (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19005020. SEMICONDUCTOR ARRANGEMENT AND METHOD OF MAKING (Taiwan Semiconductor Manufacturing Company Limited)
- 19005034. SEMICONDUCTOR DEVICE (Samsung Electronics Co., Ltd.)
- 19005713. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19005855. SEMICONDUCTOR DEVICE WITH GATE ISOLATION FEATURES AND FABRICATION METHOD OF THE SAME (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19007076. SEMICONDUCTOR DEVICE HAVING A FIN AT A S/D REGION AND A SEMICONDUCTOR CONTACT OR SILICIDE INTERFACING THEREWITH (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19008686. SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)
- 19009809. SEMICONDUCTOR DEVICE WITH GATE DIELECTRIC FORMED USING SELECTIVE DEPOSITION (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19010921. SEMICONDUCTOR DEVICE (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19011229. Assemblies Having Conductive Structures Along Pillars of Semiconductor Material, and Methods of Forming Integrated Circuitry (Micron Technology, Inc.)
- 19014248. SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF SEMICONDUCTOR DEVICE HAVING IMPROVED BREAKING WITHSTAND CAPABILITY (FUJI ELECTRIC CO., LTD.)
- 19014368. SHIELD STRUCTURE FOR BACKSIDE THROUGH SUBSTRATE VIAS (TSVS) (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19014431. Nanowire Stack GAA Device with Inner Spacer and Methods for Producing the Same (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19014789. SEMICONDUCTOR DEVICE STRUCTURE (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19014922. Semiconductor Device, Method of Manufacture by Monitoring Relative Humidity, and System of Manufacture Thereof (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19015324. GATE STRUCTURES IN TRANSISTOR DEVICES AND METHODS OF FORMING SAME (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19016771. GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING ASYMMETRIC SOURCE AND DRAIN CONTACT STRUCTURES (Intel Corporation)
- 19018287. STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE WITH NANOWIRES (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19018568. SEMICONDUCTOR DEVICE STRUCTURE (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19018623. MULTI-GATE DEVICES AND METHOD OF FABRICATION THEREOF (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19018870. SEMICONDUCTOR DEVICE (Samsung Electronics Co., Ltd.)
B
I
- Intel corporation (20250120152). GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING OXIDE SUB-FINS
- Intel corporation (20250126832). SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH GATE-ALL-AROUND DEVICES
- Intel corporation (20250126869). EPITAXIAL SOURCE OR DRAIN STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION
- Intel corporation (20250133821). INTEGRATED CIRCUIT STRUCTURES HAVING CUT METAL GATES
- Intel corporation (20250133822). RIBBON OR WIRE TRANSISTOR STACK WITH SELECTIVE DIPOLE THRESHOLD VOLTAGE SHIFTER
- Intel corporation (20250151338). GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING ASYMMETRIC SOURCE AND DRAIN CONTACT STRUCTURES
- Intel Corporation patent applications on April 10th, 2025
- Intel Corporation patent applications on April 17th, 2025
- Intel Corporation patent applications on April 24th, 2025
- Intel Corporation patent applications on May 8th, 2025
M
- Micron technology, inc. (20250142875). Assemblies Having Conductive Structures Along Pillars of Semiconductor Material, and Methods of Forming Integrated Circuitry
- Micron Technology, Inc. patent applications on May 1st, 2025
- Mitsubishi electric corporation (20250112103). SEMICONDUCTOR DEVICE AND POWER CONVERTER
- Mitsubishi Electric Corporation patent applications on April 3rd, 2025
N
S
- Samsung electronics co., ltd. (20250120129). SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Samsung electronics co., ltd. (20250126854). INTEGRATED CIRCUIT DEVICE AND METHOD OF FORMING THE SAME
- Samsung electronics co., ltd. (20250133787). SEMICONDUCTOR DEVICE
- Samsung electronics co., ltd. (20250133819). INTEGRATED CIRCUIT DEVICES HAVING HIGHLY INTEGRATED NMOS AND PMOS TRANSISTORS THEREIN AND METHODS OF FABRICATING THE SAME
- Samsung electronics co., ltd. (20250151385). SEMICONDUCTOR DEVICE
- Samsung Electronics Co., Ltd. patent applications on April 10th, 2025
- SAMSUNG ELECTRONICS CO., LTD. patent applications on April 10th, 2025
- Samsung Electronics Co., Ltd. patent applications on April 17th, 2025
- Samsung Electronics Co., Ltd. patent applications on April 24th, 2025
- Samsung Electronics Co., Ltd. patent applications on May 8th, 2025
T
- Taiwan semiconductor manufacturing co., ltd. (20250117563). Multiple Power Domains Using Nano-sheet Structures
- Taiwan semiconductor manufacturing co., ltd. (20250120115). ISOLATION STRUCTURES AND METHODS OF FORMING THE SAME IN FIELD-EFFECT TRANSISTORS
- Taiwan semiconductor manufacturing co., ltd. (20250120138). SEMICONDUCTOR DEVICE
- Taiwan semiconductor manufacturing co., ltd. (20250120151). PROCESS WINDOW CONTROL FOR GATE FORMATION IN SEMICONDUCTOR DEVICES
- Taiwan semiconductor manufacturing co., ltd. (20250120153). METHOD AND RELATED APPARATUS FOR REDUCING GATE-INDUCED DRAIN LEAKAGE IN SEMICONDUCTOR DEVICES
- Taiwan semiconductor manufacturing co., ltd. (20250120158). BIPOLAR JUNCTION TRANSISTOR (BJT) AND FABRICATING METHOD THEREOF
- Taiwan semiconductor manufacturing co., ltd. (20250120171). MANUFACTURING METHOD OF FIELD EFFECT TRANSISTOR STRUCTURE
- Taiwan semiconductor manufacturing co., ltd. (20250125150). CUT METAL GATE REFILL WITH VOID
- Taiwan semiconductor manufacturing co., ltd. (20250126822). Semiconductor Device and Method
- Taiwan semiconductor manufacturing co., ltd. (20250126881). SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Taiwan semiconductor manufacturing co., ltd. (20250126883). Semiconductor Structure Cutting Process and Structures Formed Thereby
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on April 10th, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on April 17th, 2025
- Taiwan semiconductor manufacturing company, ltd. (20250133716). SOURCE/DRAIN FEATURE SEPARATION STRUCTURE
- Taiwan semiconductor manufacturing company, ltd. (20250140563). SEMICONDUCTOR DEVICE WITH METAL GATE FILL STRUCTURE
- Taiwan semiconductor manufacturing company, ltd. (20250142857). SEMICONDUCTOR DEVICES HAVING GATE-ALL-AROUND STRUCTURE AND METHODS OF FABRICATING THE SAME
- Taiwan semiconductor manufacturing company, ltd. (20250142884). SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Taiwan semiconductor manufacturing company, ltd. (20250142900). GATE OXIDE OF NANOSTRUCTURE TRANSISTOR WITH INCREASED CORNER THICKNESS
- Taiwan semiconductor manufacturing company, ltd. (20250142904). TRANSISTOR GATE STRUCTURES AND METHODS OF FORMING THE SAME
- Taiwan semiconductor manufacturing company, ltd. (20250142919). SEMICONDUCTOR DEVICE WITH GATE DIELECTRIC FORMED USING SELECTIVE DEPOSITION
- Taiwan semiconductor manufacturing company, ltd. (20250142943). SEMICONDUCTOR DEVICE
- Taiwan semiconductor manufacturing company, ltd. (20250142950). BACKSIDE PN JUNCTION DIODE
- Taiwan semiconductor manufacturing company, ltd. (20250142954). SEMICONDUCTOR DEVICE HAVING A FIN AT A S/D REGION AND A SEMICONDUCTOR CONTACT OR SILICIDE INTERFACING THEREWITH
- Taiwan semiconductor manufacturing company, ltd. (20250149378). Semiconductor Device, Method of Manufacture by Monitoring Relative Humidity, and System of Manufacture Thereof
- Taiwan semiconductor manufacturing company, ltd. (20250149407). SHIELD STRUCTURE FOR BACKSIDE THROUGH SUBSTRATE VIAS (TSVS)
- Taiwan semiconductor manufacturing company, ltd. (20250151277). INTEGRATED CHIP WITH A GATE STRUCTURE DISPOSED WITHIN A TRENCH
- Taiwan semiconductor manufacturing company, ltd. (20250151305). MULTI-GATE DEVICES AND METHOD OF FABRICATION THEREOF
- Taiwan semiconductor manufacturing company, ltd. (20250151307). STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE WITH NANOWIRES
- Taiwan semiconductor manufacturing company, ltd. (20250151317). GATE STRUCTURES IN TRANSISTOR DEVICES AND METHODS OF FORMING SAME
- Taiwan semiconductor manufacturing company, ltd. (20250151329). SEMICONDUCTOR DEVICE WITH GATE ISOLATION FEATURES AND FABRICATION METHOD OF THE SAME
- Taiwan semiconductor manufacturing company, ltd. (20250151330). SEMICONDUCTOR DEVICE STRUCTURE
- Taiwan semiconductor manufacturing company, ltd. (20250151337). Nanowire Stack GAA Device with Inner Spacer and Methods for Producing the Same
- Taiwan semiconductor manufacturing company, ltd. (20250151347). METHOD OF MANUFACTURING A FIELD EFFECT TRANSISTOR USING CARBON NANOTUBES AND A FIELD EFFECT TRANSISTOR
- Taiwan semiconductor manufacturing company, ltd. (20250151359). SEMICONDUCTOR DEVICE STRUCTURE
- Taiwan semiconductor manufacturing company, ltd. (20250151383). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on April 24th, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on May 1st, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on May 8th, 2025