Taiwan semiconductor manufacturing co., ltd. (20250117563). Multiple Power Domains Using Nano-sheet Structures
Multiple Power Domains Using Nano-sheet Structures
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Kuo-Nan Yang of Hsinchu City TW
Multiple Power Domains Using Nano-sheet Structures
This abstract first appeared for US patent application 20250117563 titled 'Multiple Power Domains Using Nano-sheet Structures
Original Abstract Submitted
one aspect of this description relates to an integrated circuit (ic) structure including a first layer and a second layer. the first layer includes a first metal structure coupled to a first power supply having a first voltage level and a second metal structure coupled to a second power supply having a second voltage level different from the first voltage level. the second layer is formed over the first layer. the second layer includes a first nano-sheet device coupled to the first metal structure and a second nano-sheet device adjacent to the first nano-sheet device. the second nano-sheet device is coupled to the second metal structure. a distance between the first nano-sheet device and the second nano-sheet device is less than a minimum n-well to n-well spacing.