19008686. SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)
SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
Inventor(s)
CHUN-FU Cheng of HSINCHU COUNTY TW
HAN-JONG Chia of HSINCHU CITY TW
CHUNG-WEI Wu of HSIN-CHU COUNTY TW
ZHIQIANG Wu of HSINCHU COUNTY TW
SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
This abstract first appeared for US patent application 19008686 titled 'SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
Original Abstract Submitted
A semiconductor memory device includes a stack of alternating insulating layers and first conductive layers disposed over a substrate; a plurality of memory cell strings penetrating the stack over the substrate, each memory cell string comprising a central portion extending through the stack, a semiconductor layer surrounding the central portion, and a ferroelectric layer surrounding the semiconductor layer, and the central portion comprising a channel isolation structure and a second conductive layer and a third conductive layer at two sides of the channel isolation structure; and a plurality of cell isolation structures penetrating the conductive layers and the insulating layers over the substrate and disposed between two memory cell strings, each cell isolation structure comprising a top portion and a bottom portion adjoined to the top portion and different from the top portion.