Semiconductor Device and Method

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Wan-Yi Kao of Baoshan Township TW

Fang-Yi Liao of New Taipei City TW

Shu Ling Liao of Taichung City TW

Yen-Chun Huang of New Taipei City TW

Che-Hao Chang of Hsinchu TW

Yung-Cheng Lu of Hsinchu TW

Chi On Chui of Hsinchu TW

Semiconductor Device and Method

This abstract first appeared for US patent application 19002882 titled 'Semiconductor Device and Method

Original Abstract Submitted

Semiconductor devices including fin-shaped isolation structures and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a fin extending from a semiconductor substrate; a shallow trench isolation (STI) region over the semiconductor substrate adjacent the fin; and a dielectric fin structure over the STI region, the dielectric fin structure extending in a direction parallel to the fin, the dielectric fin structure including a first liner layer in contact with the STI region; and a first fill material over the first liner layer, the first fill material including a seam disposed in a lower portion of the first fill material and separated from a top surface of the first fill material, a first carbon concentration in the lower portion of the first fill material being greater than a second carbon concentration in an upper portion of the first fill material.