19004755. BACKSIDE PN JUNCTION DIODE (Taiwan Semiconductor Manufacturing Company, Ltd.)
BACKSIDE PN JUNCTION DIODE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Ching-Wei Tsai of Hsinchu City TW
Kuo-Ji Chen of Taipei County TW
BACKSIDE PN JUNCTION DIODE
This abstract first appeared for US patent application 19004755 titled 'BACKSIDE PN JUNCTION DIODE
Original Abstract Submitted
The present disclosure provides embodiments of semiconductor devices. A semiconductor device according to the present disclosure include an elongated semiconductor member surrounded by an isolation feature and extending lengthwise along a first direction, a first source/drain feature and a second source/drain feature over a top surface of the elongated semiconductor member, a vertical stack of channel members each extending lengthwise between the first source/drain feature and the second source/drain feature along the first direction, a gate structure wrapping around each of the channel members, an epitaxial layer deposited on the bottom surface of the elongated semiconductor member, a silicide layer disposed on the epitaxial layer, and a conductive layer disposed on the silicide layer.