SEMICONDUCTOR DEVICE

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Kuo-Cheng Chiang of Zhubei City TW

Chung-Wei Hsu of Hsinchu County TW

Lung-Kun Chu of New Taipei City TW

Jia-Ni Yu of New Taipei City TW

Chih-Hao Wang of Baoshan Township TW

Mao-Lin Huang of Hsinchu City TW

SEMICONDUCTOR DEVICE

This abstract first appeared for US patent application 20250142943 titled 'SEMICONDUCTOR DEVICE

Original Abstract Submitted

a semiconductor device is provided. the semiconductor device includes a plurality of first nanostructures formed over a substrate, and a plurality of second nanostructures formed over the substrate. the semiconductor device includes a gate structure surrounding the first nanostructures and the second nanostructures, and the first hard mask layer and the second hard mask layer are surrounded by the gate dielectric layer. the semiconductor device includes an isolation structure extending upwardly above the substrate, and a bottom surface of the isolation structure is lower than a bottommost surface of the gate structure.