19005020. SEMICONDUCTOR ARRANGEMENT AND METHOD OF MAKING (Taiwan Semiconductor Manufacturing Company Limited)
SEMICONDUCTOR ARRANGEMENT AND METHOD OF MAKING
Organization Name
Taiwan Semiconductor Manufacturing Company Limited
Inventor(s)
Shih-Wei Peng of Hsinchu City TW
Jiann-Tyng Tzeng of Hsin Chu TW
SEMICONDUCTOR ARRANGEMENT AND METHOD OF MAKING
This abstract first appeared for US patent application 19005020 titled 'SEMICONDUCTOR ARRANGEMENT AND METHOD OF MAKING
Original Abstract Submitted
A method of forming a semiconductor arrangement includes forming a first source pad over a semiconductor layer. A first nanosheet is formed contacting the first source pad. A gate pad is formed adjacent the first nanosheet. A first drain pad is formed over the gate pad and contacting the first nanosheet. A backside interconnect line is formed under the gate pad and the first source pad. A first backside contact is formed contacting at least one of the backside interconnect line, the first source pad, or the gate pad.