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18991791. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME (NANYA TECHNOLOGY CORPORATION)

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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Organization Name

NANYA TECHNOLOGY CORPORATION

Inventor(s)

JHEN-YU Tsai of KAOHSIUNG CITY TW

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

This abstract first appeared for US patent application 18991791 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Original Abstract Submitted

A semiconductor device and a method of manufacturing a semiconductor device are provided. The semiconductor device includes a substrate having a trench and a gate structure in the trench. The trench includes a lower gate electrode, an upper gate electrode over the lower gate electrode and a first dielectric layer partially disposed between the lower gate electrode and the upper gate electrode.

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