Mitsubishi electric corporation (20250112103). SEMICONDUCTOR DEVICE AND POWER CONVERTER
SEMICONDUCTOR DEVICE AND POWER CONVERTER
Organization Name
mitsubishi electric corporation
Inventor(s)
SEMICONDUCTOR DEVICE AND POWER CONVERTER
This abstract first appeared for US patent application 20250112103 titled 'SEMICONDUCTOR DEVICE AND POWER CONVERTER
Original Abstract Submitted
a semiconductor device includes a field insulating film formed on an epitaxial layer, a front surface electrode riding onto an inner peripheral end of the field insulating film, and an outer peripheral electrode riding onto an outer peripheral end of the field insulating film. to a surface portion of the epitaxial layer, connected is the front surface electrode, and in the surface portion of the epitaxial layer, formed is a well region extending up to the outside of the outer peripheral end of the front surface electrode. a moisture-resistant insulating film is formed so as to cover the outer peripheral end of the front surface electrode, an inner peripheral end of the outer peripheral electrode, and the field insulating film. on the moisture-resistant insulating film, formed is a semi-insulating film connected to the front surface electrode and the outer peripheral electrode which are exposed from the moisture-resistant insulating film.