SEMICONDUCTOR STRUCTURE

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor(s)

SEMICONDUCTOR STRUCTURE

This abstract first appeared for US patent application 19002734 titled 'SEMICONDUCTOR STRUCTURE

Original Abstract Submitted

A semiconductor structure includes at least a fin structure, a gate structure over the fin structure, a spacer at sidewalls of the gate structure, a connecting structure disposed over the fin structure, a first dielectric layer over the gate structure, and a second dielectric structure. The fin structure extends in a first direction, and the gate structure extends in a second direction different from the first direction. The spacer includes a solid spacer and an air spacer disposed within the solid spacer. The connecting structure is isolated from the gate structure by the spacer. The second dielectric structure extends in the first direction.