Samsung electronics co., ltd. (20250120129). SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
Organization Name
Inventor(s)
Seung Hun Lee of Hwaseong-si KR
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
This abstract first appeared for US patent application 20250120129 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
Original Abstract Submitted
a semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. the nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. the second section is between the first section and at least one of the source or drain. the first nanowire includes a channel when a voltage is applied to the gate electrode.