19000039. INTEGRATED CIRCUIT STRUCTURES HAVING CUT METAL GATES (Intel Corporation)
INTEGRATED CIRCUIT STRUCTURES HAVING CUT METAL GATES
Organization Name
Inventor(s)
Mohit K. Haran of Hillsboro OR US
Biswajeet Guha of Hillsboro OR US
Alison V. Davis of Portland OR US
Leonard P. Guler of Hillsboro OR US
INTEGRATED CIRCUIT STRUCTURES HAVING CUT METAL GATES
This abstract first appeared for US patent application 19000039 titled 'INTEGRATED CIRCUIT STRUCTURES HAVING CUT METAL GATES
Original Abstract Submitted
Integrated circuit structures having cut metal gates, and methods of fabricating integrated circuit structures having cut metal gates, are described. For example, an integrated circuit structure includes a fin having a portion protruding above a shallow trench isolation (STI) structure. A gate dielectric material layer is over the protruding portion of the fin and over the STI structure. A conductive gate layer is over the gate dielectric material layer. A conductive gate fill material is over the conductive gate layer. A dielectric gate plug is laterally spaced apart from the fin, the dielectric gate plug on but not through the STI structure. The gate dielectric material layer and the conductive gate layer are not along sides of the dielectric gate plug, and the conductive gate fill material is in contact with the sides of the dielectric gate plug.