SEMICONDUCTOR DEVICE STRUCTURE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Yi-Ruei Jhan of Keelung City TW

Kuo-Cheng Chiang of Zhubei City TW

Chih-Hao Wang of Baoshan Township TW

SEMICONDUCTOR DEVICE STRUCTURE

This abstract first appeared for US patent application 19018568 titled 'SEMICONDUCTOR DEVICE STRUCTURE

Original Abstract Submitted

A semiconductor device structure is provided. The semiconductor device structure includes a plurality of first nanostructures stacked over a substrate in a vertical direction. The semiconductor device structure includes a first gate structure surrounding the first nanostructures. The semiconductor device structure also includes a first gate spacer layer formed adjacent to the first gate structure. A topmost first nanostructure has a first portion below the gate spacer layer and a second portion below the first gate structure, and the first portion has a first height along the vertical direction, the second portion has a second height along the vertical direction, and the first height is greater than the second height.