SOURCE/DRAIN FEATURE SEPARATION STRUCTURE

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Wen-Chun Keng of Hsinchu County TW

Kuo-Hsiu Hsu of Taoyuan County TW

Chih-Chuan Yang of Hsinchu TW

Lien Jung Hung of Taipei TW

Ping-Wei Wang of Hsin-Chu TW

SOURCE/DRAIN FEATURE SEPARATION STRUCTURE

This abstract first appeared for US patent application 18999095 titled 'SOURCE/DRAIN FEATURE SEPARATION STRUCTURE

Original Abstract Submitted

A method according to the present disclosure includes receiving a structure. The structure includes a substrate, a first fin-shaped structure, a second fin-shaped structure, and a third fin-shaped structure disposed over the substrate, and a first isolation feature between the first fin-shaped structure and the second fin-shaped structure and a second isolation feature between the second fin-shaped structure and the third fin-shaped structure. The method further includes depositing a first dielectric layer over the first isolation feature and the second isolation feature, depositing a second dielectric layer over the first dielectric layer and the first isolation feature, but not over the second isolation feature, performing a first selective etching process to the first dielectric layer and the second dielectric layer, and performing a second selective etching process to the first dielectric layer over the second isolation feature. The second dielectric layer and the first dielectric layer have different etch resistance.