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Category:H01L29/165
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Pages in category "H01L29/165"
The following 38 pages are in this category, out of 38 total.
1
- 17933568. VERTICAL CHANNEL FIELD EFFECT TRANSISTOR (VCFET) WITH REDUCED CONTACT RESISTANCE AND/OR PARASITIC CAPACITANCE, AND RELATED FABRICATION METHODS simplified abstract (QUALCOMM Incorporated)
- 17986119. Finfet Device Having A Channel Defined In A Diamond-Like Shape Semiconductor Structure simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18367292. GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract (Intel Corporation)
- 18510402. GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DUAL NANORIBBON CHANNEL STRUCTURES simplified abstract (Intel Corporation)
- 18513297. SEMICONDUCTOR DEVICE INCLUDING EPITAXIAL REGION simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18514995. GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING INSULATOR FIN ON INSULATOR SUBSTRATE simplified abstract (Intel Corporation)
- 18516410. FIELD EFFECT TRANSISTORS WITH DUAL SILICIDE CONTACT STRUCTURES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18520917. SUPPORTIVE LAYER IN SOURCE/DRAINS OF FINFET DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18521913. FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18522461. METHOD FOR FABRICATING A STRAINED STRUCTURE AND STRUCTURE FORMED simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18524417. CONFORMAL TRANSFER DOPING METHOD FOR FIN-LIKE FIELD EFFECT TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18543934. Different Isolation Liners for Different Type FinFETs and Associated Isolation Feature Fabrication simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
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- Taiwan semiconductor manufacturing co., ltd. (20240096958). SUPPORTIVE LAYER IN SOURCE/DRAINS OF FINFET DEVICES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240097010). CONFORMAL TRANSFER DOPING METHOD FOR FIN-LIKE FIELD EFFECT TRANSISTOR simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240097034). METHOD FOR FABRICATING A STRAINED STRUCTURE AND STRUCTURE FORMED simplified abstract
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on March 21st, 2024
- Taiwan semiconductor manufacturing company, ltd. (20240105778). Multi-Gate Device And Method Of Fabrication Thereof simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113221). FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240136222). Different Isolation Liners for Different Type FinFETs and Associated Isolation Feature Fabrication simplified abstract
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on April 25th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on April 4th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on January 18th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on March 14th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on March 28th, 2024
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- US Patent Application 18227712. SPACER STRUCTURES FOR SEMICONDUCTOR DEVICES simplified abstract
- US Patent Application 18338759. Fin Field Effect Transistor (FinFET) Device and Method for Forming the Same simplified abstract
- US Patent Application 18361185. IC INCLUDING STANDARD CELLS AND SRAM CELLS simplified abstract
- US Patent Application 18446539. METHOD OF FABRICATING A SOURCE/DRAIN RECESS IN A SEMICONDUCTOR DEVICE simplified abstract
- US Patent Application 18447855. SEMICONDUCTOR DEVICE WITH SELF-ALIGNED WAVY CONTACT PROFILE AND METHOD OF FORMING THE SAME simplified abstract
- US Patent Application 18447953. Isolation Structures Of Semiconductor Devices simplified abstract