Taiwan semiconductor manufacturing co., ltd. (20240097010). CONFORMAL TRANSFER DOPING METHOD FOR FIN-LIKE FIELD EFFECT TRANSISTOR simplified abstract
Contents
- 1 CONFORMAL TRANSFER DOPING METHOD FOR FIN-LIKE FIELD EFFECT TRANSISTOR
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 CONFORMAL TRANSFER DOPING METHOD FOR FIN-LIKE FIELD EFFECT TRANSISTOR - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
CONFORMAL TRANSFER DOPING METHOD FOR FIN-LIKE FIELD EFFECT TRANSISTOR
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Sai-Hooi Yeong of Hsinchu County (TW)
Sheng-Chen Wang of Hsinchu County (TW)
Feng-Cheng Yang of Hsinchu County (TW)
Yen-Ming Chen of Hsin-Chu County (TW)
CONFORMAL TRANSFER DOPING METHOD FOR FIN-LIKE FIELD EFFECT TRANSISTOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240097010 titled 'CONFORMAL TRANSFER DOPING METHOD FOR FIN-LIKE FIELD EFFECT TRANSISTOR
Simplified Explanation
The patent application discloses doping techniques for fin-like field effect transistors (FinFETs). An exemplary method includes forming a fin structure, forming a doped amorphous layer over a portion of the fin structure, and performing a knock-on implantation process to drive a dopant from the doped amorphous layer into the portion of the fin structure, thereby forming a doped feature. The doped amorphous layer includes a non-crystalline form of a material. In some implementations, the knock-on implantation process crystallizes at least a portion of the doped amorphous layer, such that the portion of the doped amorphous layer becomes a part of the fin structure. In some implementations, the doped amorphous layer includes amorphous silicon, and the knock-on implantation process crystallizes a portion of the doped amorphous silicon layer.
- Formation of fin structure
- Doping of amorphous layer
- Knock-on implantation process
- Crystallization of doped amorphous layer
- Use of amorphous silicon in the doped layer
Potential Applications
The technology can be applied in the semiconductor industry for the production of FinFETs with improved performance and efficiency.
Problems Solved
1. Enhanced doping techniques for FinFETs 2. Improved integration of doped features in fin structures
Benefits
1. Increased transistor performance 2. Enhanced device reliability 3. Improved manufacturing process efficiency
Potential Commercial Applications
Optimizing semiconductor manufacturing processes for improved FinFET production
Possible Prior Art
Prior art may include traditional doping techniques for semiconductor devices and methods for integrating doped features in transistor structures.
Unanswered Questions
How does this technology compare to existing doping methods in terms of efficiency and performance enhancement?
The article does not provide a direct comparison with existing doping methods in the semiconductor industry.
What are the potential challenges or limitations of implementing this technology on a large scale in semiconductor manufacturing?
The article does not address the scalability or practical challenges of implementing these doping techniques in mass production settings.
Original Abstract Submitted
doping techniques for fin-like field effect transistors (finfets) are disclosed herein. an exemplary method includes forming a fin structure, forming a doped amorphous layer over a portion of the fin structure, and performing a knock-on implantation process to drive a dopant from the doped amorphous layer into the portion of the fin structure, thereby forming a doped feature. the doped amorphous layer includes a non-crystalline form of a material. in some implementations, the knock-on implantation process crystallizes at least a portion of the doped amorphous layer, such that the portion of the doped amorphous layer becomes a part of the fin structure. in some implementations, the doped amorphous layer includes amorphous silicon, and the knock-on implantation process crystallizes a portion of the doped amorphous silicon layer.
