Taiwan semiconductor manufacturing company, ltd. (20240105778). Multi-Gate Device And Method Of Fabrication Thereof simplified abstract
Contents
- 1 Multi-Gate Device And Method Of Fabrication Thereof
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Multi-Gate Device And Method Of Fabrication Thereof - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
Multi-Gate Device And Method Of Fabrication Thereof
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
I-Sheng Chen of Taipei City (TW)
Yee-Chia Yeo of Hsinchu City (TW)
Chih Chieh Yeh of Taipei City (TW)
Cheng-Hsien Wu of Hsinchu City (TW)
Multi-Gate Device And Method Of Fabrication Thereof - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105778 titled 'Multi-Gate Device And Method Of Fabrication Thereof
Simplified Explanation
The semiconductor device described in the abstract includes a fin structure with source/drain and channel regions, high-k dielectric layer, metal layer, and spacing area free of the metal material.
- The fin structure extends from a substrate and contains source/drain and channel regions.
- The channel region consists of a first semiconductor layer and a second semiconductor layer separated by a spacing area.
- A high-k dielectric layer partially wraps around the first and second semiconductor layers.
- A metal layer, made of a first material, is formed along the sidewalls of the high-k dielectric layer.
- The spacing area is free of the first material.
Potential Applications
This technology could be applied in:
- Advanced semiconductor devices
- High-performance electronic components
Problems Solved
This innovation addresses:
- Improved performance and efficiency of semiconductor devices
- Enhanced integration of different materials in device structures
Benefits
The benefits of this technology include:
- Higher speed and lower power consumption in electronic devices
- Increased reliability and durability of semiconductor components
Potential Commercial Applications
This technology has potential applications in:
- Consumer electronics
- Telecommunications
- Automotive industry
Possible Prior Art
One possible prior art for this technology could be the use of high-k dielectric layers in semiconductor devices to improve performance and reduce power consumption.
Unanswered Questions
How does this technology compare to existing semiconductor device structures?
This article does not provide a direct comparison with existing semiconductor device structures to highlight the advantages of the proposed innovation.
What specific manufacturing processes are required to implement this technology?
The article does not delve into the specific manufacturing processes needed to implement this semiconductor device structure, leaving a gap in understanding the practical application of the innovation.
Original Abstract Submitted
a semiconductor device includes a fin extending from a substrate. the fin has a source/drain region and a channel region. the channel region includes a first semiconductor layer and a second semiconductor layer disposed over the first semiconductor layer and vertically separated from the first semiconductor layer by a spacing area. a high-k dielectric layer at least partially wraps around the first semiconductor layer and the second semiconductor layer. a metal layer is formed along opposing sidewalls of the high-k dielectric layer. the metal layer includes a first material. the spacing area is free of the first material.
