METHOD OF FABRICATING A SOURCE/DRAIN RECESS IN A SEMICONDUCTOR DEVICE

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METHOD OF FABRICATING A SOURCE/DRAIN RECESS IN A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18446539 titled 'METHOD OF FABRICATING A SOURCE/DRAIN RECESS IN A SEMICONDUCTOR DEVICE

Simplified Explanation

The patent application describes a device that includes a gate stack and spacers on a semiconductor substrate.

The gate stack is surrounded by spacers on its sidewalls.
A recess is formed in the semiconductor substrate next to the gate stack.
The recess has two profiles - a first profile with vertical sidewalls and a second profile below the first profile.
The second profile is wider within the semiconductor substrate than the first profile, creating a bottle-neck shape.
The recess is filled with a semiconductor material.
Additional spacers are placed on the semiconductor substrate next to the recess.

Original Abstract Submitted

A device including a gate stack over a semiconductor substrate having a pair of spacers abutting sidewalls of the gate stack. A recess is formed in the semiconductor substrate adjacent the gate stack. The recess has a first profile having substantially vertical sidewalls and a second profile contiguous with and below the first profile. The first and second profiles provide a bottle-neck shaped profile of the recess in the semiconductor substrate, the second profile having a greater width within the semiconductor substrate than the first profile. The recess is filled with a semiconductor material. A pair of spacers are disposed overly the semiconductor substrate adjacent the recess.

US Patent Application 18446539. METHOD OF FABRICATING A SOURCE/DRAIN RECESS IN A SEMICONDUCTOR DEVICE simplified abstract

Contents

METHOD OF FABRICATING A SOURCE/DRAIN RECESS IN A SEMICONDUCTOR DEVICE

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