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Category:G11C16/24
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Pages in category "G11C16/24"
The following 58 pages are in this category, out of 58 total.
1
- 17461278. THREE-DIMENSIONAL ONE TIME PROGRAMMABLE MEMORY simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17721574. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17742879. NON-VOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17750315. NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING NONVOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17806103. NONVOLATILE MEMORY DEVICE AND STORAGE DEVICE INCLUDING NONVOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17819826. DETECTING A MEMORY WRITE RELIABILITY RISK WITHOUT USING A WRITE VERIFY OPERATION simplified abstract (Micron Technology, Inc.)
- 17836453. PAGE BUFFER CIRCUIT AND MEMORY DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17852129. NON-VOLATILE MEMORY WITH PRECISE PROGRAMMING simplified abstract (Western Digital Technologies, Inc.)
- 17866904. NONVOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17871358. NONVOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17893755. ERASE SUSPEND WITH CONFIGURABLE FORWARD PROGRESS simplified abstract (Micron Technology, Inc.)
- 17898604. MEMORY DEVICES INCLUDING LOGIC NON-VOLATILE MEMORY simplified abstract (Micron Technology, Inc.)
- 17940945. Weight Calibration Check for Integrated Circuit Devices having Analog Inference Capability simplified abstract (Micron Technology, Inc.)
- 17955858. OPERATION METHOD OF MEMORY DEVICE AND OPERATION METHOD OF MEMORY SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17965004. PAGE BUFFER CIRCUIT AND MEMORY DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17984890. NON-VOLATILE MEMORY DEVICE AND ERASE METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18045971. MEMORY DEVICE HAVING VERTICAL STRUCTURE AND MEMORY SYSTEM INCLUDING THE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18057386. NONVOLATILE MEMORY DEVICE AND STORAGE DEVICE INCLUDING NONVOLATILE MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18058555. NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18064635. NONVOLATILE MEMORY DEVICE AND METHOD OF PROGRAMMING IN THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18067224. NON-VOLATILE MEMORY DEVICE, STORAGE DEVICE INCLUDING THE SAME, AND READ METHOD THEREOF simplified abstract (Samsung Electronics Co., Ltd.)
- 18073340. PAGE BUFFER CIRCUIT, METHOD OF OPERATING A SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR MEMORY SYSTEM simplified abstract (SK hynix Inc.)
- 18079433. OPERATION METHOD OF NONVOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18088046. NONVOLATILE MEMORY DEVICE AND OPERATION METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18099808. NONVOLATILE MEMORY DEVICE AND METHOD OF CONTROLLING READ OPERATION OF THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18103496. NONVOLATILE MEMORY DEVICE INCLUDING SELECTION TRANSISTORS AND OPERATING METHOD THEREOF simplified abstract (SK hynix Inc.)
- 18177704. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18197258. MEMORY DEVICE INCLUDING PAGE BUFFER CIRCUIT simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18207979. OPERATION METHOD OF MEMORY DEVICE INCLUDING MEMORY BLOCK CONNECTED TO WORDLINES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18239140. SEMICONDUCTOR MEMORY DEVICE HAVING MEMORY CHIP BONDED TO A CMOS CHIP INCLUDING A PERIPHERAL CIRCUIT simplified abstract (Kioxia Corporation)
- 18315311. INTERFACES BETWEEN HIGHER VOLTAGE AND LOWER VOLTAGE WAFERS AND RELATED APPARATUSES AND METHODS simplified abstract (Micron Technology, Inc.)
- 18378540. MEMORY DEVICE THAT PERFORMS ERASE OPERATION TO PRESERVE DATA RELIABILITY simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18402647. METHOD AND MEMORY DEVICE WITH INCREASED READ AND WRITE MARGIN simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18491966. NON-VOLATILE MEMORY DEVICE AND PROGRAMMING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18504093. MEMORY DEVICE INCLUDING PASS TRANSISTOR CIRCUIT simplified abstract (Samsung Electronics Co., Ltd.)
- 18524458. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
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- Samsung electronics co., ltd. (20240105267). NON-VOLATILE MEMORY DEVICE simplified abstract
- Samsung electronics co., ltd. (20240105268). MEMORY DEVICE INCLUDING PASS TRANSISTOR CIRCUIT simplified abstract
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 15th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 1st, 2024
- Samsung Electronics Co., Ltd. patent applications on February 29th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 8th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on March 28th, 2024
- Sk hynix inc. (20240120008). NONVOLATILE MEMORY DEVICE INCLUDING SELECTION TRANSISTORS AND OPERATING METHOD THEREOF simplified abstract
- SK hynix Inc. patent applications on April 11th, 2024
- SK hynix Inc. patent applications on January 18th, 2024
T
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- US Patent Application 17825048. HIGH SPEED MULTI-LEVEL CELL (MLC) PROGRAMMING IN NON-VOLATILE MEMORY STRUCTURES simplified abstract
- US Patent Application 18232539. THREE-DIMENSIONAL ONE TIME PROGRAMMABLE MEMORY simplified abstract
- US Patent Application 18362201. SYSTEM AND METHOD FOR RELIABLE SENSING OF MEMORY CELLS simplified abstract