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Category:H10B51/30
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This category has the following 38 subcategories, out of 38 total.
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Pages in category "H10B51/30"
The following 200 pages are in this category, out of 227 total.
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- 18053182. Ferroelectric Memory Device And Electronic Device Including The Same simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18062245. VERTICAL NON-VOLATILE MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18090807. INTEGRATED CIRCUIT STRUCTURES HAVING LAYER SELECT TRANSISTORS FOR SHARED PERIPHERALS IN MEMORY simplified abstract (Intel Corporation)
- 18108722. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18132196. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18142291. THREE-DIMENSIONAL NON-VOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18150281. SPACER FILM SCHEME FORM POLARIZATION IMPROVEMENT simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18151483. MEMORY ARRAY AND OPERATION METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18155688. THREE-DIMENSIONAL MEMORY DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18156593. MEMORY CELL AND METHOD OF OPERATING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18171167. SEMICONDUCTOR MEMORY STRUCTURE HAVING ENHANCED MEMORY WINDOW AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18172027. FERROELECTRIC MEMORY DEVICE WITH MULTI-LEVEL BIT CELL simplified abstract (GlobalFoundries U.S. Inc.)
- 18178529. FERROELECTRIC MEMORY DEVICE AND MEMORY ARRAY simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18203886. FERROELECTRIC MEMORY ARRAYS WITH LOW PERMITTIVITY DIELECTRIC BARRIERS simplified abstract (Micron Technology, Inc.)
- 18217730. NON-VOLATILE MEMORY DEVICE AND SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18222278. SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18236056. Integrated Circuitry, Method Used In The Fabrication Of A Vertical Transistor, And Method Used In The Fabrication Of Integrated Circuitry simplified abstract (Micron Technology, Inc.)
- 18301597. THREE-DIMENSIONAL SEMICONDUCTOR DEVICE INCLUDING FERROELECTRIC TRANSISTOR simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18330392. THREE-DIMENSIONAL FERROELECTRIC MEMORY DEVICE simplified abstract (SK hynix Inc.)
- 18362196. 3D MEMORY MULTI-STACK CONNECTION METHOD simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18363592. SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18364616. EMBEDDED FERROELECTRIC FINFET MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18398336. SEMICONDUCTOR MEMORY DEVICES (SAMSUNG ELECTRONICS CO., LTD.)
- 18401988. THREE-DIMENSIONAL MEMORY DEVICE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18406745. THREE-DIMENSIONAL MEMORY DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18412793. SEMICONDUCTOR DEVICE INCLUDING FERROELECTRIC LAYER simplified abstract (Samsung Electronics Co., Ltd.)
- 18418880. FERROELECTRIC MEMORY OPERATION BIAS AND POWER DOMAINS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18419987. ANNEALED SEED LAYER TO IMPROVE FERROELECTRIC PROPERTIES OF MEMORY LAYER simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18420171. FERROELECTRIC FET-BASED CONTENT-ADDRESSABLE MEMORY simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18430291. THREE-DIMENSIONAL (3D) FERROELECTRIC RANDOM ACCESS MEMORY (FERAM) AND MANUFACTURING METHOD THEREOF simplified abstract (Samsung Electronics Co., Ltd.)
- 18434981. SEMICONDUCTOR DEVICE simplified abstract (ROHM CO., LTD.)
- 18446043. SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18453483. SEMICONDUCTOR SWITCHING DEVICES HAVING FERROELECTRIC LAYERS THEREIN AND METHODS OF FABRICATING SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18459962. NONVOLATILE SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD THEREFOR simplified abstract (Kioxia Corporation)
- 18466538. FERROELECTRIC NON-VOLATILE MEMORY AND METHODS OF FORMATION (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18483907. SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18492343. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18492964. MEMORY WITH FRAM AND SRAM OF IC simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18501360. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18506177. EMBEDDED FERROELECTRIC MEMORY CELL simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18510975. GRID STRUCTURE TO REDUCE DOMAIN SIZE IN FERROELECTRIC MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18516908. INTEGRATED CIRCUIT INCLUDING THREE-DIMENSIONAL MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18518716. METHOD OF WRITING TO OR ERASING MULTI-BIT MEMORY STORAGE DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18518736. MEMORY CELL AND METHOD OF OPERATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18522637. Vertical Transistor, Integrated Circuitry, Method Of Forming A Vertical Transistor, And Method Of Forming Integrated Circuitry simplified abstract (Micron Technology, Inc.)
- 18525301. ANALOG NON-VOLATILE MEMORY DEVICE USING POLY FERRORELECTRIC FILM WITH RANDOM POLARIZATION DIRECTIONS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18546807. FERROELECTRIC FIELD-EFFECT TRANSISTOR WITH HIGH PERMITTIVITY INTERFACIAL LAYER simplified abstract (THE REGENTS OF THE UNIVERSITY OF CALIFORNIA)
- 18593959. THREE-DIMENSIONAL MEMORY DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18593981. SEMICONDUCTOR MEMORY DEVICE, AND SEMICONDUCTOR MEMORY DEVICE MANUFACTURING METHOD simplified abstract (Kioxia Corporation)
- 18593989. SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Kioxia Corporation)
- 18597801. THREE-DIMENSIONAL FERROELECTRIC MEMORY DEVICE AND METHODS OF FABRICATING THE SAME (Tokyo Electron Limited)
- 18597981. TWO-DIMENSIONAL (2D) MATERIAL FOR OXIDE SEMICONDUCTOR (OS) FERROELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18598660. NANOSHEET 3D TRANSISTOR FOR ADVANCED MEMORY ELEMENTS (Tokyo Electron Limited)
- 18598907. FERROELECTRIC 3D MEMORY BLOCK UNIT (Tokyo Electron Limited)
- 18599495. SEMICONDUCTOR DEVICE AND METHOD FOR TRANSISTOR MEMORY ELEMENT simplified abstract (Tokyo Electron Limited)
- 18602067. MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18605714. BACK-END ACTIVE DEVICE AND LOGIC GATE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18609404. TRI-GATE TRANSISTOR AND METHODS FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company Limited)
- 18612011. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18615398. MEMORY CIRCUIT AND WRITE METHOD simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18674134. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18677952. FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18678963. SEMICONDUCTOR DIES INCLUDING LOW AND HIGH WORKFUNCTION SEMICONDUCTOR DEVICES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18732268. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING SEMICONDUCTOR DEVICE (SAMSUNG ELECTRONICS CO., LTD.)
- 18751331. METHOD OF FORMING MEMORY DEVICE INCLUDING CONDUCTIVE PILLARS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18761688. FERROELECTRIC FIELD EFFECT TRANSISTOR, MEMORY DEVICE, AND NEURAL NETWORK DEVICE (Samsung Electronics Co., Ltd.)
- 18783638. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC SYSTEM INCLUDING SEMICONDUCTOR DEVICE (Samsung Electronics Co., Ltd.)
- 18786604. THREE-DIMENSIONAL MEMORY DEVICE AND MANUFACTURING METHOD THEREOF (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18913098. SEMICONDUCTOR DEVICE, AND MEMORY APPARATUS AND ELECTRONIC APPARATUS INCLUDING THE SEMICONDUCTOR DEVICE (Samsung Electronics Co., Ltd.)
- 18913129. SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME (Samsung Electronics Co., Ltd.)
- 18927200. SEMICONDUCTOR DEVICE, MEMORY DEVICE, AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE (SAMSUNG ELECTRONICS CO., LTD.)
- 18943866. METHOD OF FORMING MEMORY DEVICE (Taiwan Semiconductor Manufacturing Company, LTD.)
- 18947139. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME (Taiwan Semiconductor Manufacturing Company, LTD.)
- 18956837. SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18959781. 3D FERROELECTRIC MEMORY (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18985584. Ferroelectric Capacitor, Ferroelectric Field Effect Transistor, and Method Used in Forming an Electronic Device Comprising Conductive Material and Ferroelectric Material (MICRON TECHNOLOGY, INC.)
- 19008686. SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)
- 19011247. FERROELECTRIC CHANNEL FIELD EFFECT TRANSISTOR (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19012003. SEMICONDUCTOR MEMORY DEVICE HAVING WORD LINES SURROUNDED BY MEMORY LAYERS AND METHOD OF MAKING THE SEMICONDUCTOR MEMORY DEVICE (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19018073. Memory Arrays Comprising Vertically-Alternating Tiers Of Insulative Material And Memory Cells And Methods Of Forming A Memory Array Comprising Memory Cells Individually Comprising A Transistor And A Capacitor (Micron Technology, Inc.)
B
I
- Intel corporation (20240224536). INTEGRATED CIRCUIT STRUCTURES HAVING LAYER SELECT TRANSISTORS FOR SHARED PERIPHERALS IN MEMORY simplified abstract
- Intel corporation (20240355682). EXTENSION OF NANOCOMB TRANSISTOR ARRANGEMENTS TO IMPLEMENT GATE ALL AROUND simplified abstract
- Intel Corporation patent applications on July 4th, 2024
- Intel Corporation patent applications on October 24th, 2024
K
- Kioxia corporation (20240096389). NONVOLATILE SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD THEREFOR simplified abstract
- Kioxia corporation (20240315041). SEMICONDUCTOR MEMORY DEVICE, AND SEMICONDUCTOR MEMORY DEVICE MANUFACTURING METHOD simplified abstract
- Kioxia corporation (20240315043). SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract
- Kioxia Corporation patent applications on March 21st, 2024
- Kioxia Corporation patent applications on September 19th, 2024
M
- Micron technology, inc. (20240164114). Vertical Transistor, Integrated Circuitry, Method Of Forming A Vertical Transistor, And Method Of Forming Integrated Circuitry simplified abstract
- Micron technology, inc. (20240265960). Memory Arrays, Ferroelectric Transistors, and Methods of Reading and Writing Relative to Memory Cells of Memory Arrays simplified abstract
- Micron technology, inc. (20240292630). MEMORY DEVICES HAVING ADJACENT MEMORY CELLS WITH MITIGATED DISTURB RISK simplified abstract
- Micron technology, inc. (20250118493). Ferroelectric Capacitor, Ferroelectric Field Effect Transistor, and Method Used in Forming an Electronic Device Comprising Conductive Material and Ferroelectric Material
- Micron technology, inc. (20250151284). Memory Arrays Comprising Vertically-Alternating Tiers Of Insulative Material And Memory Cells And Methods Of Forming A Memory Array Comprising Memory Cells Individually Comprising A Transistor And A Capacitor
- MICRON TECHNOLOGY, INC. patent applications on April 10th, 2025
- Micron Technology, Inc. patent applications on August 29th, 2024
- Micron Technology, Inc. patent applications on August 8th, 2024
- Micron Technology, Inc. patent applications on May 16th, 2024
- Micron Technology, Inc. patent applications on May 8th, 2025
- Micron Technology, Inc. patent applications on September 5th, 2024
R
S
- Samsung electronics co., ltd. (20240107774). THREE DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240107775). INTEGRATED CIRCUIT DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240130138). SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240224535). SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240244848). SEMICONDUCTOR DEVICE INCLUDING FERROELECTRIC LAYER simplified abstract
- Samsung electronics co., ltd. (20240276733). SEMICONDUCTOR MEMORY DEVICE simplified abstract
- Samsung electronics co., ltd. (20240324234). THREE-DIMENSIONAL (3D) FERROELECTRIC RANDOM ACCESS MEMORY (FERAM) AND MANUFACTURING METHOD THEREOF simplified abstract
- Samsung electronics co., ltd. (20240324239). SEMICONDUCTOR MEMORY DEVICE simplified abstract
- Samsung electronics co., ltd. (20240422987). SEMICONDUCTOR MEMORY DEVICES
- Samsung electronics co., ltd. (20240428838). SYNAPSE DEVICE INCLUDING FERROELECTRIC FIELD EFFECT TRANSISTOR AND NEURAL NETWORK APPARATUS INCLUDING THE SAME
- Samsung electronics co., ltd. (20250024684). VERTICAL SEMICONDUCTOR DEVICE
- Samsung electronics co., ltd. (20250126802). FERROELECTRIC FIELD EFFECT TRANSISTOR, MEMORY DEVICE, AND NEURAL NETWORK DEVICE
- Samsung electronics co., ltd. (20250126803). SEMICONDUCTOR DEVICE, AND MEMORY APPARATUS AND ELECTRONIC APPARATUS INCLUDING THE SEMICONDUCTOR DEVICE
- Samsung electronics co., ltd. (20250126875). SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME
- Samsung electronics co., ltd. (20250133742). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC SYSTEM INCLUDING SEMICONDUCTOR DEVICE
- Samsung electronics co., ltd. (20250142834). SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING SEMICONDUCTOR DEVICE
- Samsung electronics co., ltd. (20250142835). SEMICONDUCTOR DEVICE, MEMORY DEVICE, AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE
- Samsung Electronics Co., Ltd. patent applications on April 17th, 2025
- Samsung Electronics Co., Ltd. patent applications on April 18th, 2024
- Samsung Electronics Co., Ltd. patent applications on April 24th, 2025
- Samsung Electronics Co., Ltd. patent applications on August 15th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on August 15th, 2024
- Samsung Electronics Co., Ltd. patent applications on December 19th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on December 19th, 2024
- Samsung Electronics Co., Ltd. patent applications on December 26th, 2024
- Samsung Electronics Co., Ltd. patent applications on February 13th, 2025
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 15th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 1st, 2024
- Samsung Electronics Co., Ltd. patent applications on February 6th, 2025
- Samsung Electronics Co., Ltd. patent applications on January 16th, 2025
- Samsung Electronics Co., Ltd. patent applications on January 18th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on January 25th, 2024
- Samsung Electronics Co., Ltd. patent applications on July 18th, 2024
- Samsung Electronics Co., Ltd. patent applications on July 4th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on July 4th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on March 28th, 2024
- Samsung Electronics Co., Ltd. patent applications on May 1st, 2025
- SAMSUNG ELECTRONICS CO., LTD. patent applications on May 1st, 2025
- Samsung Electronics Co., Ltd. patent applications on September 26th, 2024
T
- Taiwan semiconductor manufacturing co., ltd. (20240096388). MEMORY CELL AND METHOD OF OPERATING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240097032). METHOD OF WRITING TO OR ERASING MULTI-BIT MEMORY STORAGE DEVICE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240099016). SEMICONDUCTOR MEMORY STRUCTURE HAVING ENHANCED MEMORY WINDOW AND METHOD FOR MANUFACTURING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240161803). FERROELECTRIC MEMORY OPERATION BIAS AND POWER DOMAINS simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240164109). THREE-DIMENSIONAL MEMORY DEVICES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240164111). ANNEALED SEED LAYER TO IMPROVE FERROELECTRIC PROPERTIES OF MEMORY LAYER simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240224538). BACK-END ACTIVE DEVICE AND LOGIC GATE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240251564). THREE-DIMENSIONAL MEMORY DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240315042). SEMICONDUCTOR DIES INCLUDING LOW AND HIGH WORKFUNCTION SEMICONDUCTOR DEVICES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240315044). SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240422986). THREE-DIMENSIONAL MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
- Taiwan semiconductor manufacturing co., ltd. (20240431116). FEFET DEVICE
- Taiwan semiconductor manufacturing co., ltd. (20250089263). SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Taiwan semiconductor manufacturing co., ltd. (20250089264). 3D FERROELECTRIC MEMORY
- Taiwan semiconductor manufacturing co., ltd. (20250089265). FERROELECTRIC NON-VOLATILE MEMORY AND METHODS OF FORMATION
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on December 19th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on December 26th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on February 1st, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on January 25th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on January 30th, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on July 25th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on July 4th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on March 13th, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on March 21st, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on May 16th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. patent applications on September 19th, 2024
- Taiwan semiconductor manufacturing company, ltd. (20240107776). ANTIFERROELECTRIC NON-VOLATILE MEMORY simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240114691). ANALOG NON-VOLATILE MEMORY DEVICE USING POLY FERRORELECTRIC FILM WITH RANDOM POLARIZATION DIRECTIONS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240138153). FERROELECTRIC MEMORY DEVICE AND MEMORY ARRAY simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240206185). FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240213367). TWO-DIMENSIONAL (2D) MATERIAL FOR OXIDE SEMICONDUCTOR (OS) FERROELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240215254). MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240233795). MEMORY CIRCUIT AND WRITE METHOD simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240242750). FERROELECTRIC FET-BASED CONTENT-ADDRESSABLE MEMORY simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240324235). FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240349508). METHOD OF FORMING MEMORY DEVICE INCLUDING CONDUCTIVE PILLARS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240379533). INTEGRATION OF VIA AND BOTTOM ELECTRODE FOR MEMORY CELL simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240381613). DATA BACKUP UNIT FOR STATIC RANDOM-ACCESS MEMORY DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240381653). MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240381654). FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240381656). THREE-DIMENSIONAL MEMORY DEVICES simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240381657). THREE-DIMENSIONAL MEMORY DEVICES simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240381665). SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240414923). SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF
- Taiwan semiconductor manufacturing company, ltd. (20240414924). FERROELECTRIC RANDOM ACCESS MEMORY DEVICE AND METHOD
- Taiwan semiconductor manufacturing company, ltd. (20250070025). METHOD OF FORMING MEMORY DEVICE
- Taiwan semiconductor manufacturing company, ltd. (20250072004). THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME
- Taiwan semiconductor manufacturing company, ltd. (20250149453). SEMICONDUCTOR MEMORY DEVICE HAVING WORD LINES SURROUNDED BY MEMORY LAYERS AND METHOD OF MAKING THE SEMICONDUCTOR MEMORY DEVICE
- Taiwan semiconductor manufacturing company, ltd. (20250151370). FERROELECTRIC CHANNEL FIELD EFFECT TRANSISTOR
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on April 25th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on April 4th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on December 12th, 2024
- Taiwan Semiconductor Manufacturing Company, LTD. patent applications on February 13th, 2025
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on February 15th, 2024
- Taiwan Semiconductor Manufacturing Company, LTD. patent applications on February 27th, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on February 29th, 2024