FERROELECTRIC FET-BASED CONTENT-ADDRESSABLE MEMORY

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

FERROELECTRIC FET-BASED CONTENT-ADDRESSABLE MEMORY - A simplified explanation of the abstract

This abstract first appeared for US patent application 18420171 titled 'FERROELECTRIC FET-BASED CONTENT-ADDRESSABLE MEMORY

Simplified Explanation: The patent application discloses an efficient FeFET-based CAM that can perform normal read and write operations while also being able to match input data with don't-care values. Specifically, it introduces a Ferroelectric FET Based Ternary Content Addressable Memory design that utilizes two FeFETs and four MOSFETs per cell.

Key Features and Innovation:

Efficient FeFET-based CAM capable of normal read, write, and matching input data with don't-care values
Utilizes two FeFETs and four MOSFETs per cell
Supports multi-phase writes for column writing
Can be used for ternary content-based search
Don't-care values can be input or stored data

Potential Applications: The technology can be applied in various fields such as data storage, pattern recognition, and content-based searching.

Problems Solved: The technology addresses the need for efficient content-based searching and matching in memory systems.

Benefits:

Improved efficiency in content-based searching
Enhanced memory operations with the ability to match input data with don't-care values

Commercial Applications: The technology can be utilized in industries requiring efficient and accurate content-based searching, such as data centers, artificial intelligence, and telecommunications.

Prior Art: Readers can explore prior art related to FeFET-based CAMs, ternary content addressable memories, and memory systems utilizing FeFETs.

Frequently Updated Research: Stay updated on research related to FeFET-based CAMs, ternary content addressable memories, and advancements in memory technologies.

Questions about FeFET-based CAMs: 1. What are the potential challenges in implementing FeFET-based CAMs in large-scale memory systems? 2. How does the efficiency of FeFET-based CAMs compare to traditional memory systems in terms of speed and power consumption?

Original Abstract Submitted

An efficient FeFET-based CAM is disclosed which is capable of performing normal read, write but has the ability to match input data with don't-care. More specifically, a Ferroelectric FET Based Ternary Content Addressable Memory is disclosed. The design in some examples utilizes two FeFETs and four MOSFETs per cell. The CAM can be written in columns through multi-phase writes. It can be used a normal memory with indexing read. It also has the ability for ternary content-based search. The don't-care values can be either the input or the stored data.