18492343. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

SEMICONDUCTOR DEVICE

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Woo Bin Song of Hwaseong-si (KR)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18492343 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The semiconductor device described in the patent application includes a substrate with two regions, each having a gate stack consisting of a stacked insulating film and a gate electrode. The first gate stack on the first region is wider than the second gate stack on the second region. The second gate stack's insulating film contains multiple ferroelectric material films.

• The semiconductor device has a unique gate structure with different widths for the gate stacks on different regions of the substrate.
• The second gate stack includes a plurality of ferroelectric material films in its insulating film.

Potential Applications

• This technology could be applied in the development of advanced semiconductor devices for various electronic applications.

Problems Solved

• The innovation addresses the need for improved gate structures in semiconductor devices to enhance performance and functionality.

Benefits

• The semiconductor device with this gate structure design may offer enhanced performance and efficiency compared to traditional designs.
• The inclusion of ferroelectric material films in the gate stack insulating film could lead to improved device characteristics and functionality.

Original Abstract Submitted

A semiconductor device includes a substrate including a first region and a second region, a first gate stack on the first region and including a first gate stacked insulating film and a first gate electrode on the first gate stacked insulating film, and a second gate stack on the second region and including a second gate stacked insulating film and a second gate electrode on the second gate stacked insulating film, wherein a width of the first gate stack is greater than a width of the second gate stack and the second gate stacked insulating film includes a plurality of ferroelectric material films.