18598660. NANOSHEET 3D TRANSISTOR FOR ADVANCED MEMORY ELEMENTS (Tokyo Electron Limited)
NANOSHEET 3D TRANSISTOR FOR ADVANCED MEMORY ELEMENTS
Organization Name
Inventor(s)
Partha Mukhopadhyay of Oviedo FL US
Henry Jim Fulford of Albany NY US
Mark I. Gardner of Albany NY US
NANOSHEET 3D TRANSISTOR FOR ADVANCED MEMORY ELEMENTS
This abstract first appeared for US patent application 18598660 titled 'NANOSHEET 3D TRANSISTOR FOR ADVANCED MEMORY ELEMENTS
Original Abstract Submitted
Semiconductor devices and corresponding methods of manufacture are disclosed. The semiconductor device includes a first metal structure extending in a first lateral direction. The semiconductor device includes a first ferroelectric layer surrounding a first portion of the first metal structure. The semiconductor device includes a first channel layer surrounding the first ferroelectric layer. The semiconductor device includes a first gate structure surrounding the first portion of the first metal structure, with the first ferroelectric layer and the first channel layer interposed therebetween. The semiconductor device includes a first gate electrode in electrical contact with the first gate structure. The semiconductor device includes a second gate electrode in electrical contact with a second portion of the first metal structure.