Samsung electronics co., ltd. (20250024684). VERTICAL SEMICONDUCTOR DEVICE
VERTICAL SEMICONDUCTOR DEVICE
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VERTICAL SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 20250024684 titled 'VERTICAL SEMICONDUCTOR DEVICE
Original Abstract Submitted
a vertical semiconductor device includes a substrate, a stacked structure including a plurality of insulation patterns and a plurality of gate electrode structures alternately and repeatedly stacked on the substrate in a vertical direction substantially perpendicular to a surface of the substrate, a channel pattern passing through the stacked structure, a gate insulation layer surrounding an outer wall of the channel pattern, and a gate insulation pattern disposed between the gate insulation layer and the gate electrode structures. the gate insulation layer includes a metal oxide having paraelectricity, and the gate insulation pattern has ferroelectricity. the gate insulation layer includes a first portion contacting one of the insulation patterns and a second portion contacting the gate insulation pattern.