Category:Sai-Hooi Yeong of Zhubei City (TW)
Sai-Hooi Yeong
Sai-Hooi Yeong from Zhubei City (TW) has applied for patents in technology areas such as H10B51/20, H10B51/10, H10B51/30 with taiwan semiconductor manufacturing co., ltd..
Patents
Pages in category "Sai-Hooi Yeong of Zhubei City (TW)"
The following 41 pages are in this category, out of 41 total.
1
- 17835769. SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18151682. THREE-DIMENSIONAL STACKABLE FERROELECTRIC RANDOM ACCESS MEMORY DEVICES AND METHODS OF FORMING simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18360471. SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18364616. EMBEDDED FERROELECTRIC FINFET MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18443997. MEMORY ARRAY TEST STRUCTURE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18501137. THREE-DIMENSIONAL MEMORY DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18510975. GRID STRUCTURE TO REDUCE DOMAIN SIZE IN FERROELECTRIC MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18517275. FLEXIBLE MERGE SCHEME FOR SOURCE/DRAIN EPITAXY REGIONS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18517458. Contacts for Semiconductor Devices and Methods of Forming the Same simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18526084. Low-K Gate Spacer and Methods for Forming the Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18597981. TWO-DIMENSIONAL (2D) MATERIAL FOR OXIDE SEMICONDUCTOR (OS) FERROELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18635461. NEGATIVE CAPACITANCE TRANSISTOR WITH EXTERNAL FERROELECTRIC STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18637552. 3D Stackable Memory and Methods of Manufacture simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18677952. FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18677954. 3D MEMORY WITH GRAPHITE CONDUCTIVE STRIPS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18756682. SEMICONDUCTOR DEVICES WITH FERROELECTRIC LAYER AND METHODS OF MANUFACTURING THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18941445. Memory Device and Method of Forming Thereof (Taiwan Semiconductor Manufacturing Company, LTD.)
- 18959781. 3D FERROELECTRIC MEMORY (Taiwan Semiconductor Manufacturing Co., Ltd.)
T
- Taiwan semiconductor manufacturing co., ltd. (20240098959). FLEXIBLE MERGE SCHEME FOR SOURCE/DRAIN EPITAXY REGIONS simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240186414). FERROELECTRIC STRUCTURE FOR SEMICONDUCTOR DEVICES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240194234). MEMORY ARRAY TEST STRUCTURE AND METHOD OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240315033). 3D MEMORY WITH GRAPHITE CONDUCTIVE STRIPS simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20250089264). 3D FERROELECTRIC MEMORY
- Taiwan semiconductor manufacturing company, ltd. (20240113202). Low-K Gate Spacer and Methods for Forming the Same simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240206185). FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240213367). TWO-DIMENSIONAL (2D) MATERIAL FOR OXIDE SEMICONDUCTOR (OS) FERROELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240266417). NEGATIVE CAPACITANCE TRANSISTOR WITH EXTERNAL FERROELECTRIC STRUCTURE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240268128). 3D Stackable Memory and Methods of Manufacture simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240324235). FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240347632). SEMICONDUCTOR DEVICES WITH FERROELECTRIC LAYER AND METHODS OF MANUFACTURING THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240381654). FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20250072002). Memory Device and Method of Forming Thereof
U
- US Patent Application 18230864. TRANSISTOR INCLUDING HYDROGEN DIFFUSION BARRIER FILM AND METHODS OF FORMING SAME simplified abstract
- US Patent Application 18343972. Semiconductor Devices Including Ferroelectric Memory and Methods of Forming the Same simplified abstract
- US Patent Application 18359507. Semiconductor Device and Method of Manufacturing simplified abstract
- US Patent Application 18361429. SCALABLE PATTERNING THROUGH LAYER EXPANSION PROCESS AND RESULTING STRUCTURES simplified abstract
- US Patent Application 18363217. FERROELECTRIC MFM CAPACITOR ARRAY AND METHODS OF MAKING THE SAME simplified abstract
- US Patent Application 18446541. SELF-ALIGNED ACTIVE REGIONS AND PASSIVATION LAYER AND METHODS OF MAKING THE SAME simplified abstract
- US Patent Application 18446953. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE simplified abstract
- US Patent Application 18447153. SEMICONDUCTOR DEVICE AND METHOD simplified abstract
- US Patent Application 18447495. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE simplified abstract