FEFET DEVICE

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Kuo-Chang Chiang of Hsinchu City (TW)

Chung-Te Lin of Tainan City (TW)

Yu-Ming Lin of Hsinchu City (TW)

Po-Ting Lin of Taichung City (TW)

Yu-Chuan Shih of Hsinchu City (TW)

FEFET DEVICE

This abstract first appeared for US patent application 20240431116 titled 'FEFET DEVICE

Original Abstract Submitted

the present disclosure relates a ferroelectric field-effect transistor (fefet) device. the fefet device includes a ferroelectric structure having a first side and a second side. a gate structure is disposed along the first side of the ferroelectric structure, and an oxide semiconductor is disposed along the second side of the ferroelectric structure. the oxide semiconductor has a first semiconductor type. a source region and a drain region are disposed on the oxide semiconductor. the gate structure is laterally between the source region and the drain region. a polarization enhancement structure is arranged on the oxide semiconductor between the source region and the drain region. the polarization enhancement structure includes a semiconductor material or an oxide semiconductor material having a second semiconductor type that is different than the first semiconductor type.