19011247. FERROELECTRIC CHANNEL FIELD EFFECT TRANSISTOR (Taiwan Semiconductor Manufacturing Company, Ltd.)

FERROELECTRIC CHANNEL FIELD EFFECT TRANSISTOR

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Gerben Doornbos of Kessel-Lo BE

Marcus Johannes Henricus Van Dal of Linden BE

Georgios Vellianitis of Heverlee BE

FERROELECTRIC CHANNEL FIELD EFFECT TRANSISTOR

This abstract first appeared for US patent application 19011247 titled 'FERROELECTRIC CHANNEL FIELD EFFECT TRANSISTOR

Original Abstract Submitted

Semiconductor devices and methods of forming the same are provided. A semiconductor device according to the present disclosure includes a ferroelectric structure including a channel region and a source/drain region, a gate dielectric layer disposed over the channel region of the ferroelectric structure, a gate electrode disposed on the gate dielectric layer, and a source/drain contact disposed on the source/drain region of the ferroelectric structure. The ferroelectric structure includes gallium nitride, indium nitride, or indium gallium nitride. The ferroelectric structure is doped with a dopant.