Rohm co., ltd. (20240284681). SEMICONDUCTOR DEVICE simplified abstract
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Noriyuki Shimoji of Kyoto (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240284681 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes a field-effect transistor connected to a load, with a control terminal that regulates the flow of electric current through the channel. Additionally, it features a nonvolatile memory connected to the control terminal, which can change the direction of the electric field from the control terminal.
- Field-effect transistor connected to a load
- Control terminal regulates conduction through the channel
- Nonvolatile memory connected to the control terminal
- Memory can change the direction of the electric field from the control terminal
Potential Applications: - Memory storage devices - Integrated circuits - Electronic control systems
Problems Solved: - Efficient control of electric current flow - Nonvolatile memory integration
Benefits: - Enhanced control over electric current - Improved memory storage capabilities
Commercial Applications: Title: Semiconductor Device for Enhanced Control Systems This technology can be used in various electronic devices such as smartphones, computers, and automotive systems to improve performance and efficiency.
Questions about Semiconductor Device with Nonvolatile Memory: 1. How does the nonvolatile memory impact the overall functionality of the semiconductor device? 2. What are the potential implications of using this technology in memory storage devices?
Frequently Updated Research: Researchers are constantly exploring ways to enhance the performance and efficiency of semiconductor devices with nonvolatile memory integration. Stay updated on the latest advancements in this field for potential future applications.
Original Abstract Submitted
provided is a semiconductor device including a field effect transistor that has a first terminal connected to a load, a second terminal conducting to the first terminal via a channel, and a control terminal that controls conduction and interruption of the channel by an electric field, and a nonvolatile memory that is a nonvolatile memory connected to the control terminal and has a second control terminal supplied with a voltage that changes a direction of the electric field from the control terminal.