FERROELECTRIC MEMORY DEVICE WITH MULTI-LEVEL BIT CELL

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Inventor(s)

FERROELECTRIC MEMORY DEVICE WITH MULTI-LEVEL BIT CELL - A simplified explanation of the abstract

This abstract first appeared for US patent application 18172027 titled 'FERROELECTRIC MEMORY DEVICE WITH MULTI-LEVEL BIT CELL

The abstract describes a ferroelectric memory device with a unique structure involving a gate electrode, oxide layer, and ferroelectric layer.

The gate electrode has multiple electrode portions aligned parallel to the substrate's surface.
The oxide layer contains corresponding oxide portions to the electrode portions.
The ferroelectric layer sits between the gate electrode and oxide layer, with ferroelectric portions corresponding to the oxide portions.
Some oxide and ferroelectric portions vary in thickness along a perpendicular direction.

Potential Applications: - Memory storage in electronic devices - Non-volatile memory applications - High-speed data processing systems

Problems Solved: - Enhanced memory storage capabilities - Improved data retention and retrieval speed - Increased efficiency in memory devices

Benefits: - Higher data storage density - Faster data access times - Improved overall performance of electronic devices

Commercial Applications: Title: "Innovative Ferroelectric Memory Device for Enhanced Data Storage" This technology can be utilized in: - Consumer electronics - Data centers - Aerospace and defense industries

Questions about Ferroelectric Memory Devices: 1. How does the unique structure of this ferroelectric memory device improve data storage capabilities? - The structure allows for increased data storage density and faster access times due to the optimized arrangement of the gate electrode, oxide layer, and ferroelectric layer.

2. What advantages does a ferroelectric memory device offer over traditional memory technologies? - Ferroelectric memory devices provide non-volatile storage, faster read/write speeds, and lower power consumption compared to traditional memory technologies.

Original Abstract Submitted

A ferroelectric memory device includes a substrate including a source region and a drain region, and a gate structure disposed over the substrate. The gate structure includes a gate electrode including a plurality of electrode portions arranged in a first direction parallel to a top surface of the substrate, an oxide layer including a plurality of oxide portions corresponding respectively to the plurality of electrode portions, and a ferroelectric layer disposed between the gate electrode and the oxide layer along a second direction perpendicular to the first direction and including a plurality of ferroelectric portions corresponding respectively to the plurality of oxide portions. A least one of the plurality of oxide portions and at least one of the plurality of ferroelectric portions have different thicknesses along the second direction.