SEMICONDUCTOR DEVICE AND METHOD FOR TRANSISTOR MEMORY ELEMENT

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SEMICONDUCTOR DEVICE AND METHOD FOR TRANSISTOR MEMORY ELEMENT - A simplified explanation of the abstract

This abstract first appeared for US patent application 18599495 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR TRANSISTOR MEMORY ELEMENT

The abstract describes methods and devices for electronic devices, such as memory elements, utilizing a gate structure as a storage capacitor for a memory element.

The device includes a first layer with a source region, a drain region, and a channel between them.
The gate dielectric is on the first layer and in contact with the channel.
A first conductor is on the gate dielectric, followed by a ferroelectric layer and a second conductor material.
The gate structure serves as a storage capacitor for the memory element.

Potential Applications: - Memory devices - Integrated circuits - Semiconductor technology

Problems Solved: - Enhancing memory element performance - Improving storage capacitor efficiency

Benefits: - Increased memory device functionality - Enhanced data storage capabilities

Commercial Applications: - Memory chip manufacturing - Semiconductor industry advancements

Prior Art: Prior research on ferroelectric memory elements and storage capacitors in electronic devices.

Frequently Updated Research: Ongoing studies on ferroelectric materials in memory devices and semiconductor technology.

Questions about the technology: 1. How does the gate structure improve memory element performance? 2. What are the potential drawbacks of using ferroelectric materials in memory devices?

Original Abstract Submitted

Methods and devices are described for electronic devices, such as memory elements. In some implementations, the device may include a first layer including a source region, a drain region and a channel between the source region and drain region, the source and drain being in the same or different plane than at least a portion of the channel. In addition, the device may include a gate dielectric on the first layer and in contact with the channel, a first conductor on the gate dielectric, a ferroelectric layer on the first conductor, and a second conductor material on the ferroelectric layer. The gate structure may be utilized as a storage capacitor for a memory element.