THREE-DIMENSIONAL MEMORY DEVICES

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Katherine H. Chiang of New Taipei City (TW)

THREE-DIMENSIONAL MEMORY DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240381657 titled 'THREE-DIMENSIONAL MEMORY DEVICES

The patent application describes a device with a pair of dielectric layers, a word line, a tunneling strip, a semiconductor strip, a bit line, and a source line.

The device includes a pair of dielectric layers.
A word line is situated between the dielectric layers, with recessed sidewalls.
A tunneling strip is located on the top surface of the word line.
A semiconductor strip is positioned on the tunneling strip.
A bit line contacts the sidewall of the semiconductor strip.
A source line also contacts the sidewall of the semiconductor strip.

Potential Applications: - Memory devices - Semiconductor technology - Integrated circuits

Problems Solved: - Improved performance in memory devices - Enhanced connectivity in semiconductor strips

Benefits: - Increased efficiency in data storage - Enhanced signal transmission

Commercial Applications: Title: Advanced Memory Devices for High-Speed Data Processing This technology can be utilized in the development of faster and more efficient memory devices for various applications such as data centers, consumer electronics, and automotive systems.

Questions about the technology: 1. How does the positioning of the tunneling strip impact the performance of the device? - The positioning of the tunneling strip allows for efficient data transfer and storage within the device. 2. What advantages does the contact between the bit line and the semiconductor strip offer? - The contact between the bit line and the semiconductor strip enables seamless communication and data retrieval within the device.

Original Abstract Submitted

in an embodiment, a device includes: a pair of dielectric layers; a word line between the dielectric layers, sidewalls of the dielectric layers being recessed from a sidewall of the word line; a tunneling strip on a top surface of the word line, the sidewall of the word line, a bottom surface of the word line, and the sidewalls of the dielectric layers; a semiconductor strip on the tunneling strip; a bit line contacting a sidewall of the semiconductor strip; and a source line contacting the sidewall of the semiconductor strip.