METHOD OF FORMING MEMORY DEVICE

Organization Name

Taiwan Semiconductor Manufacturing Company, LTD.

Inventor(s)

Li-Shyue Lai of Hsinchu Country (TW)

Chien-Hao Huang of Hsinchu City (TW)

Chia-Yu Ling of Hsinchu City (TW)

Katherine H Chiang of New Taipei City (TW)

Chung-Te Lin of Tainan City (TW)

METHOD OF FORMING MEMORY DEVICE

This abstract first appeared for US patent application 18943866 titled 'METHOD OF FORMING MEMORY DEVICE

Original Abstract Submitted

A manufacturing method of a semiconductor structure includes at least the following steps. A memory device is formed in an interconnect structure over a substrate. Forming the memory device includes forming an alternating stack of dielectric material layers and conductive material layers, wherein the alternating stack includes a memory array region and a staircase region adjacent to the memory array region; forming a trench on the memory array region of the alternating stack; forming a data storage layer, channel layers, bit line pillars, and source line pillars in the trench; and performing patterning processes to from a staircase structure on the staircase region. The staircase structure steps downward from a first direction and makes a 180-degree turn to step downward in a second direction opposite to the first direction.