Samsung electronics co., ltd. (20240422987). SEMICONDUCTOR MEMORY DEVICES
SEMICONDUCTOR MEMORY DEVICES
Organization Name
Inventor(s)
Kyung Hwan Lee of Suwon-si (KR)
Myung Hun Woo of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICES
This abstract first appeared for US patent application 20240422987 titled 'SEMICONDUCTOR MEMORY DEVICES
Original Abstract Submitted
there is provided a semiconductor memory device comprising: a first word line; a second word line spaced apart from the first word line, a back gate electrode between the first word line and the second word line; a first channel pattern between the first word line and the back gate electrode; a second channel pattern between the second word line and the back gate electrode; a first gate insulating film between the first word line and the first channel pattern; a second gate insulating film between the second word line and the second channel pattern; a first bit line on the first channel pattern and the second channel pattern, wherein the first bit line is connected to the first channel pattern; and a second bit line on the first channel pattern and the second channel pattern, wherein the second bit line is connected to the second channel pattern.