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Category:H10N70/00
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Pages in category "H10N70/00"
The following 50 pages are in this category, out of 50 total.
1
- 18060884. SEMICONDUCTOR MEMORY DEVICE INCLUDING CHALCOGENIDE simplified abstract (SK hynix Inc.)
- 18071740. VARIABLE RESISTANCE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18105935. PHASE-CHANGE MATERIAL-BASED XOR LOGIC GATES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18150863. PHASE-CHANGE DEVICE STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18156543. VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRING simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18156734. MEMORY DEVICE, INTEGRATED CIRCUIT DEVICE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18162299. SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18164926. MEMORY DEVICE AND MEMORY APPARATUS COMPRISING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18167354. NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18231750. PHASE CHANGE RANDOM ACCESS MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18238291. MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND MEMORY ELEMENT BETWEEN CHANNEL REGION AND CONDUCTIVE PLATE simplified abstract (Micron Technology, Inc.)
- 18299811. NEUROMORPHIC MEMORY ELEMENT SIMULTANEOUSLY IMPLEMENTING VOLATILE AND NON-VOLATILE FEATURE FOR EMULATION OF NEURON AND SYNAPSE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18303692. PHASE CHANGE MATERIAL SWITCH WITH IMPROVED THERMAL DISSIPATION AND METHODS FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company Limited)
- 18348846. METAL CHALCOGENIDE FILM, MEMORY ELEMENT INCLUDING SAME, AND METHOD FOR MANUFACTURING PHASE-CHANGE HETEROLAYER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18403014. RESISTIVE MEMORY CELL WITH SWITCHING LAYER COMPRISING ONE OR MORE DOPANTS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18455815. SELECTIVE ENCAPSULATION FOR METAL ELECTRODES OF EMBEDDED MEMORY DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18478776. SEMICONDUCTOR DEVICE INCLUDING CHALCOGEN COMPOUND AND SEMICONDUCTOR APPARATUS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18515226. MEMORY CELL, METHOD OF FORMING THE SAME, AND SEMICONDUCTOR DEVICE HAVING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18519964. SEMICONDUCTOR DEVICES AND HYBRID TRANSISTORS simplified abstract (Micron Technology, Inc.)
- 18521109. MEMORY DEVICE, AND INTEGRATED CIRCUIT DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
H
- Huawei technologies co., ltd. (20240114808). PHASE-CHANGE STORAGE UNIT, PHASE-CHANGE MEMORY, ELECTRONIC DEVICE, AND PREPARATION METHOD simplified abstract
- Huawei technologies co., ltd. (20240130253). PHASE CHANGE MEMORY, ELECTRONIC DEVICE, AND PREPARATION METHOD FOR PHASE CHANGE MEMORY simplified abstract
- HUAWEI TECHNOLOGIES CO., LTD. patent applications on April 18th, 2024
- HUAWEI TECHNOLOGIES CO., LTD. patent applications on April 4th, 2024
M
S
T
- Taiwan semiconductor manufacturing co., ltd. (20240099025). MEMORY DEVICE, AND INTEGRATED CIRCUIT DEVICE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240130252). THERMAL BARRIER STRUCTURE IN PHASE CHANGE MATERIAL DEVICE simplified abstract
- Taiwan Semiconductor manufacturing Co., Ltd. patent applications on April 18th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on February 1st, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on January 25th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on March 21st, 2024
- Taiwan semiconductor manufacturing company, ltd. (20240107903). MEMORY DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240112987). SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240138272). RESISTIVE MEMORY CELL WITH SWITCHING LAYER COMPRISING ONE OR MORE DOPANTS simplified abstract
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on April 25th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on April 4th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on February 15th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on January 18th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on March 14th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on March 28th, 2024
U
- US Patent Application 18305268. PHASE-CHANGE MEMORY CELL simplified abstract
- US Patent Application 18358685. MEMORY DEVICE STRUCTURE WITH DATA STORAGE ELEMENT simplified abstract
- US Patent Application 18363751. METHODS OF FORMING MEMORY DEVICES simplified abstract
- US Patent Application 18447232. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE simplified abstract