18150863. PHASE-CHANGE DEVICE STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

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PHASE-CHANGE DEVICE STRUCTURE

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Fu-Ting Sung of Taoyuan County (TW)

Tsung-Hsueh Yang of Taichung City (TW)

Chang-Ming Wu of New Taipei City (TW)

Chang-Chih Huang of Taichung (TW)

Yu-Wen Wang of Taichung City (TW)

Kuo-Chyuan Tzeng of Hsin-Chu County (TW)

PHASE-CHANGE DEVICE STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18150863 titled 'PHASE-CHANGE DEVICE STRUCTURE

Simplified Explanation

The patent application describes a device structure with specific layers and components for improved performance.

  • The device structure includes a first electrode and a second electrode separated by an etch stop layer (ESL).
  • A first dielectric layer is placed between the first electrode and the second electrode.
  • A phase-change material layer is positioned over the first electrode, the first dielectric layer, and the second electrode.
  • An insulator layer is placed over the phase-change material layer.
  • A metal feature is positioned over the insulator layer.
  • A second dielectric layer is placed over the insulator layer, the first electrode, the second electrode, and the metal feature.

Potential applications of this technology:

  • Memory devices
  • Data storage devices
  • Computing devices

Problems solved by this technology:

  • Improved performance and efficiency of devices
  • Enhanced data storage capabilities
  • Better control over electrical conductivity

Benefits of this technology:

  • Increased speed and reliability of devices
  • Higher data storage capacity
  • Enhanced overall device performance


Original Abstract Submitted

Device structures and methods for forming the same are provided. A device structure according to the present disclosure includes a first electrode and a second electrode disposed over an etch stop layer (ESL), a first dielectric layer disposed between the first electrode and the second electrode, a phase-change material layer disposed over the first electrode, the first dielectric layer and the second electrode, an insulator layer disposed over the phase-change material layer, a metal feature disposed over the insulator layer, and a second dielectric layer disposed over the insulator layer, the first electrode, the second electrode, and the metal feature.

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