18162299. SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
- 1 SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Fu-Ting Sung of Yangmei City (TW)
SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING - A simplified explanation of the abstract
This abstract first appeared for US patent application 18162299 titled 'SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING
Simplified Explanation
The cell structure of a memory device includes an upper electrode structure separated from a metal line above the cell structure by one or more layers, including an isolation layer. The cell structure can be patterned using a metal line below as an etch-stop layer, reducing the overall height of the memory structure and improving performance and reliability.
- The memory device includes an upper electrode structure separated from a metal line by one or more layers.
- The cell structure can be patterned using a metal line below as an etch-stop layer.
- This technique reduces the overall height of the memory structure.
- It improves performance and reliability by reducing the likelihood of shorting between the metal line and the upper electrode structure.
Potential Applications
This technology can be applied in the manufacturing of memory devices, such as DRAM or flash memory, to improve their performance and reliability.
Problems Solved
This technology solves the problem of shorting between the metal line and the upper electrode structure in memory devices, improving their overall performance and reliability.
Benefits
The benefits of this technology include reduced height of the memory structure, improved performance, and increased reliability of memory devices.
Potential Commercial Applications
This technology can be commercially applied in the semiconductor industry for the production of advanced memory devices with enhanced performance and reliability.
Possible Prior Art
One possible prior art could be the use of silicon carbide layers as etch-stop layers in memory device manufacturing processes.
Unanswered Questions
How does this technology impact the cost of manufacturing memory devices?
The article does not address the potential cost implications of implementing this technology in memory device production.
Are there any limitations to the reduction in height of the memory structure?
The article does not mention any limitations or constraints related to the reduction in height of the memory structure.
Original Abstract Submitted
A cell structure of a memory device includes an upper electrode structure separated from a metal line above the cell structure by a combination of one or more layers including an isolation layer. The cell structure may be patterned using a metal line below the cell structure as an etch-stop layer. Relative to other techniques that include patterning the cell structure using a silicon carbide layer located over the metal line below the cell structure as an etch-stop layer, the techniques described herein may reduce an overall height of the memory structure. Additionally, or alternatively, the techniques may maintain or increase an isolation distance between the metal line above the cell structure and the upper electrode structure. In this way, a likelihood of shorting between the metal line above the cell structure and the upper electrode structure is reduced to improve a performance and/or a reliability of the memory device.
