Taiwan semiconductor manufacturing company, ltd. (20240138272). RESISTIVE MEMORY CELL WITH SWITCHING LAYER COMPRISING ONE OR MORE DOPANTS simplified abstract
Contents
- 1 RESISTIVE MEMORY CELL WITH SWITCHING LAYER COMPRISING ONE OR MORE DOPANTS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 RESISTIVE MEMORY CELL WITH SWITCHING LAYER COMPRISING ONE OR MORE DOPANTS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
RESISTIVE MEMORY CELL WITH SWITCHING LAYER COMPRISING ONE OR MORE DOPANTS
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Fa-Shen Jiang of Taoyuan City (TW)
Cheng-Yuan Tsai of Chu-Pei City (TW)
Hai-Dang Trinh of Hsinchu (TW)
Hsing-Lien Lin of Hsin-Chu (TW)
Hsun-Chung Kuang of Hsinchu City (TW)
RESISTIVE MEMORY CELL WITH SWITCHING LAYER COMPRISING ONE OR MORE DOPANTS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240138272 titled 'RESISTIVE MEMORY CELL WITH SWITCHING LAYER COMPRISING ONE OR MORE DOPANTS
Simplified Explanation
The present disclosure describes an integrated chip with multiple layers including conductive structures and dielectric layers for data storage.
- The integrated chip includes a first conductive structure over a substrate.
- A data storage structure is located above the first conductive structure, consisting of a first dielectric layer and a second dielectric layer.
- The first dielectric layer contains a dielectric material and a first dopant with a changing concentration towards the first conductive structure.
- A second conductive structure is positioned over the data storage structure.
Potential Applications
This technology could be applied in:
- Memory storage devices
- Integrated circuits
- Data processing systems
Problems Solved
This technology addresses:
- Increasing data storage capacity
- Enhancing data processing speed
- Improving overall performance of electronic devices
Benefits
The benefits of this technology include:
- Higher data storage density
- Faster data access and retrieval
- Enhanced reliability and durability of electronic devices
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Consumer electronics
- Computer hardware
- Telecommunications industry
Possible Prior Art
One possible prior art for this technology could be the use of similar integrated chip structures in memory devices and semiconductor manufacturing processes.
What are the specific materials used in the first dielectric layer?
The specific materials used in the first dielectric layer are a dielectric material and a first dopant with a changing concentration towards the first conductive structure.
How does the changing concentration of the first dopant affect the performance of the data storage structure?
The changing concentration of the first dopant in the first dielectric layer can impact the conductivity and storage capabilities of the data storage structure, potentially improving data retention and access speeds.
Original Abstract Submitted
various embodiments of the present disclosure are directed towards an integrated chip including a first conductive structure over a substrate. a data storage structure overlies the first conductive structure. the data storage structure comprises a first dielectric layer on the first conductive structure and a second dielectric layer on the first dielectric layer. the first dielectric layer comprises a dielectric material and a first dopant having a concentration that changes from a top surface of the first dielectric layer in a direction towards the first conductive structure. a second conductive structure overlies the data storage structure.
