US Patent Application 18358685. MEMORY DEVICE STRUCTURE WITH DATA STORAGE ELEMENT simplified abstract

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MEMORY DEVICE STRUCTURE WITH DATA STORAGE ELEMENT

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Hai-Dang Trinh of Hsinchu (TW)]]

[[Category:Hsing-Lien Lin of Hsinchu (TW)]]

[[Category:Cheng-Yuan Tsai of Chupei City (TW)]]

MEMORY DEVICE STRUCTURE WITH DATA STORAGE ELEMENT - A simplified explanation of the abstract

This abstract first appeared for US patent application 18358685 titled 'MEMORY DEVICE STRUCTURE WITH DATA STORAGE ELEMENT

Simplified Explanation

The patent application describes a semiconductor device structure that includes a substrate and a data storage element placed on top of the substrate.

  • The structure also includes a protective element that extends into the data storage element, with its bottom surface positioned between the top and bottom surfaces of the data storage element.
  • The structure further includes a first electrode and a second electrode, both of which are electrically connected to the data storage element.


Original Abstract Submitted

A semiconductor device structure is provided. The structure includes a substrate and a data storage element over the substrate. The structure also includes a protective element extending into the data storage element. A bottom surface of the protective element is between a top surface of the data storage element and a bottom surface of the data storage element. The structure further includes a first electrode electrically connected to the data storage element and a second electrode electrically connected to the data storage element.

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