18515226. MEMORY CELL, METHOD OF FORMING THE SAME, AND SEMICONDUCTOR DEVICE HAVING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
MEMORY CELL, METHOD OF FORMING THE SAME, AND SEMICONDUCTOR DEVICE HAVING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Yu-Chao Lin of Hsinchu City (TW)
Tung-Ying Lee of Hsinchu City (TW)
MEMORY CELL, METHOD OF FORMING THE SAME, AND SEMICONDUCTOR DEVICE HAVING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18515226 titled 'MEMORY CELL, METHOD OF FORMING THE SAME, AND SEMICONDUCTOR DEVICE HAVING THE SAME
Simplified Explanation
The memory cell described in the patent application includes a bottom electrode, a top electrode, and a storage element layer situated between the two electrodes. The sidewall of the storage element layer extends in a different direction from the sidewall of the top electrode.
- Memory cell with bottom electrode, top electrode, and storage element layer
- Sidewall of storage element layer extends differently from top electrode sidewall
- Semiconductor device incorporating the memory cell
Potential Applications
- Memory storage devices
- Semiconductor manufacturing
Problems Solved
- Efficient memory cell design
- Improved semiconductor device performance
Benefits
- Enhanced data storage capabilities
- Increased device reliability
- Potential for smaller and more efficient devices
Original Abstract Submitted
Provided are a memory cell and a method of forming the same. The memory cell includes a bottom electrode, a top electrode, and a storage element layer. The storage element layer is disposed between the bottom and top electrodes. An extending direction of a sidewall of the storage element layer is different from an extending direction of a sidewall of the top electrode. A semiconductor device having the memory cell is also provided.
