18167354. NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME
Organization Name
Inventor(s)
Houk Jang of Cambridge MA (US)
Donhee Ham of Cambridge MA (US)
Chengye Liu of Cambridge MA (US)
Henry Julian Hinton of Cambridge MA (US)
Haeryong Kim of Seongnam-si (KR)
Hyeonjin Shin of Suwon-si (KR)
NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18167354 titled 'NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME
Simplified Explanation
The abstract describes a nonvolatile memory device that uses light to change and maintain the resistance value of a resistance switching layer. Here are the bullet points explaining the patent/innovation:
- The nonvolatile memory device consists of a resistance switching layer, a gate, a gate oxide layer, and a source and drain.
- The resistance switching layer's resistance value can be altered by illuminating it with light.
- The changed resistance value of the resistance switching layer is maintained even after the light is removed.
- The gate oxide layer acts as a barrier between the resistance switching layer and the gate.
- The source and drain are positioned on the resistance switching layer but are spaced apart from each other.
Potential applications of this technology:
- Nonvolatile memory devices that can be programmed and erased using light.
- Memory devices that can store data even when power is lost.
- High-speed data storage and retrieval systems.
Problems solved by this technology:
- Overcoming the limitations of traditional nonvolatile memory devices that require electrical programming and erasing.
- Providing a more efficient and reliable method for changing and maintaining resistance values in memory devices.
Benefits of this technology:
- Faster programming and erasing of memory devices.
- Lower power consumption compared to traditional nonvolatile memory devices.
- Increased reliability and durability of memory devices.
Original Abstract Submitted
A nonvolatile memory device includes a resistance switching layer, a gate on the resistance switching layer, a gate oxide layer between the resistance switching layer and the gate, and a source and a drain, spaced apart from each other, on the resistance switching layer. A resistance value of the resistance switching layer is changed based on an illumination of light irradiated onto the resistance switching layer and is maintained as a changed resistance value.
