18455815. SELECTIVE ENCAPSULATION FOR METAL ELECTRODES OF EMBEDDED MEMORY DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

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SELECTIVE ENCAPSULATION FOR METAL ELECTRODES OF EMBEDDED MEMORY DEVICES

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Ashim Dutta of MENANDS NY (US)

Ekmini Anuja De Silva of Slingerlands NY (US)

Jennifer Church of Troy NY (US)

SELECTIVE ENCAPSULATION FOR METAL ELECTRODES OF EMBEDDED MEMORY DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18455815 titled 'SELECTIVE ENCAPSULATION FOR METAL ELECTRODES OF EMBEDDED MEMORY DEVICES

Simplified Explanation

The patent application describes a semiconductor device structure and a method for fabricating it. The structure includes an embedded memory device, an electrode in contact with the memory device, and a metal encapsulation layer on top of the electrode.

  • The semiconductor device structure includes an embedded memory device and an electrode in contact with it.
  • A metal encapsulation layer is formed on top of the electrode and a portion of its sidewalls.
  • The metal encapsulation layer is made of materials that are resistant to chemical etching and conductive when oxidized.
  • The method involves forming an insulating layer over the memory device and electrode.
  • Portions of the insulating layer are etched to expose the top surface and sidewalls of the electrode.
  • A metal encapsulation layer is then formed over and in contact with the exposed surfaces of the electrode.

Potential applications of this technology:

  • Semiconductor devices with embedded memory, such as microcontrollers or memory chips.
  • Integrated circuits that require a protective layer for the electrode.

Problems solved by this technology:

  • Protects the electrode and embedded memory device from chemical etching.
  • Provides a conductive layer for improved electrical performance.

Benefits of this technology:

  • Enhanced durability and reliability of the semiconductor device.
  • Improved electrical conductivity due to the conductive metal encapsulation layer.
  • Simplified fabrication process for embedding memory devices.


Original Abstract Submitted

A semiconductor device structure and a method for fabricating the same. The semiconductor device structure includes an embedded memory device and an electrode in contact with a top surface of the memory embedded device. A metal encapsulation layer is in contact with a top surface of the electrode and a portion of sidewalls of the electrode. The metal encapsulation layer comprises one or more materials that are chemical etch resistant and are conductive when oxidized. The method includes forming an insulating layer over a memory device and an electrode in contact with the memory device. Portions of the insulating layer are etched. The etching exposes a top surface and a portion of sidewalls of the electrode. A metal encapsulation layer is formed over and in contact with the top surface and the portion of sidewalls of the electrode.

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