US Patent Application 18363751. METHODS OF FORMING MEMORY DEVICES simplified abstract
Contents
METHODS OF FORMING MEMORY DEVICES
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==
[[Category:Hung-Li Chiang of Taipei City (TW)]]
[[Category:Jer-Fu Wang of Taipei City (TW)]]
[[Category:Chao-Ching Cheng of Hsinchu City (TW)]]
[[Category:Tzu-Chiang Chen of Hsinchu City (TW)]]
METHODS OF FORMING MEMORY DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18363751 titled 'METHODS OF FORMING MEMORY DEVICES
Simplified Explanation
The patent application describes a method of forming a memory device. Here are the key points:
- The method involves forming a first conductive plug within a dielectric layer on a substrate.
- A treating process is performed to transform a portion of the first conductive plug into a buffer layer, which covers the remaining portion of the plug.
- A phase change layer and a top electrode are then formed over the buffer layer.
- A second dielectric layer is formed to encapsulate the top electrode and the underlying phase change layer.
- A second conductive plug is formed within the second dielectric layer, making physical contact with the top electrode.
- Additionally, a filamentary bottom electrode is formed within the buffer layer.
Overall, this method allows for the creation of a memory device with specific layers and plugs, providing improved performance and functionality.
Original Abstract Submitted
A method of forming a memory device includes the following operations. A first conductive plug is formed within a first dielectric layer over a substrate. A treating process is performed to transform a portion of the first conductive plug into a buffer layer, and the buffer layer caps the remaining portion of the first conductive plug. A phase change layer and a top electrode are sequentially formed over the buffer layer. A second dielectric layer is formed to encapsulate the top electrode and the underlying phase change layer. A second conductive plug is formed within the second dielectric layer and in physical contact with the top electrode. A filamentary bottom electrode is formed within the buffer layer.
